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NTIS 바로가기Journal of sensor science and technology = 센서학회지, v.27 no.3, 2018년, pp.150 - 155
Doh, Seung-Hyun (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) , Hahm, Sung-Ho (School of Electronics Engineering, College of IT Engineering, Kyungpook National University)
Three different structures of GaN MOSFETs with trap distributions, trap levels, and densities were simulated, and its results were analyzed. Two of them are Schottky barrier MOSFETs(SB-MOSFETs): one with a p-type GaN body while the other is in the accumulation mode MOSFET with an undoped GaN body an...
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