[논문]Trap-related Electrical Properties of GaN MOSFETs Through TCAD Simulation

Doh, Seung-Hyun; Hahm, Sung-Ho

doi:10.5369/jsst.2018.27.3.150

Trap-related Electrical Properties of GaN MOSFETs Through TCAD Simulation 원문보기

Journal of sensor science and technology = 센서학회지, v.27 no.3, 2018년, pp.150 - 155

Doh, Seung-Hyun (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) , Hahm, Sung-Ho (School of Electronics Engineering, College of IT Engineering, Kyungpook National University)

Abstract ▼ AI-Helper

Three different structures of GaN MOSFETs with trap distributions, trap levels, and densities were simulated, and its results were analyzed. Two of them are Schottky barrier MOSFETs(SB-MOSFETs): one with a p-type GaN body while the other is in the accumulation mode MOSFET with an undoped GaN body and regrown source/drain. The trap levels, distributions and densities were considered based on the measured or calculated properties. For the SB-MOSFET, the interface trap distribution affected the threshold voltage significantly, but had a relatively small influence on the subthreshold swing, while the bulk trap distribution affects the subthreshold swing more.

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가설 설정

To determine the criteria for trap distributions in a bulk GaN layer, the PL measurement data of an undoped GaN epi layer on a sapphire substrate was considered. The result indicates that the traps in a bulk GaN layer are also distributed as interface trap distributions by a broad peak distribution.

제안 방법

In detail, GaN MOSFETs with trap distributions and certain values of trap levels and densities representing point defects were simulated using Silvaco’s technology computer-aided design (TCAD) tool and the results were analyzed.
In this study, a comprehensive two-dimensional simulation was performed to obtain the method to reduce the threshold voltage variation in the integrated circuit, to form the basis for development and to successfully integrate the MOS IC in GaN. In detail, GaN MOSFETs with trap distributions and certain values of trap levels and densities representing point defects were simulated using Silvaco’s technology computer-aided design (TCAD) tool and the results were analyzed.
Three GaN MOSFETs structures were selected to compare the previous experimental results published and check the usefulness of this simulation approach. Two of them are Schottky barrier MOSFETs, one with p-type GaN body while the other is the accumulation mode with an undoped GaN body.
To obtain the primary defect mechanisms attributed to the output current degradation of the MOSFET of structure II, we performed a series of simulations. The trap distributions and parameters are shown in Table 5 [15].
To obtain the primary defect mechanisms attributed to the output current degradation, we performed a series of simulations. The trap distributions [15] and parameters are shown in Tables 3, 4.

참고문헌 (19)

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상세보기
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상세보기
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상세보기
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Trap-related Electrical Properties of GaN MOSFETs Through TCAD Simulation 원문보기

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Trap-related Electrical Properties of GaN MOSFETs Through TCAD Simulation 원문보기

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