[논문]구속 포텐셜의 전자-압전 포논 상호 작용에 따른 GaAs의 자기장 의존 특성

이수호; 김해재; 주석민

doi:10.5370/kieep.2018.67.3.149

구속 포텐셜의 전자-압전 포논 상호 작용에 따른 GaAs의 자기장 의존 특성
The Magnetic Field Dependence of the Confinement Potential due to the Interaction of Electron and Piezoelectric Phonon in GaAs Semiconducting Materials 원문보기

전기학회논문지. The Transactions of the Korean Institute of Electrical Engineers. P, v.67 no.3, 2018년, pp.149 - 154

이수호 (Dept. of Electrical Engineering, Donga Univerity) , 김해재 (Dept. of Electrical Engineering, Masan Univerity) , 주석민 (Dept. of Electrical Engineering, Masan Univerity)

Abstract ▼ AI-Helper

We consider the system is subject to the linearly polarized oscillatory external field. We study the optical quantum transition Line shapes(QTLS) which show the absorption power and the quantum transition line widths(QTLW) of electron-piezoelectric phonon interacting system. We analyze the magnetic field dependence of the QTLS and the QTLW in various cases. In order to analysis the quantum transition, we compare the magnetic field dependence of the QTLW and the QTLS of two transition process, the intra-Landau level transition process and the inter-Landau level transition process.

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표/그림 (4)

그림 Fig. 1 The relativity frequency(Δ𝜔) dependence of the absorption power(QTLS), P(B) of GaAs, with λ=84, 119, 220, 394, 513 μm(according to the order from the bottom line to the top line). at T=30K.
그림 Fig. 2 The magnetic field dependence of of QTLW , γ(B) of GaAs at T=30, 40, 50, 55, 60, 70, 75, 80, 90, 120K (according to the order from the bottom line to the top line).
그림 Fig. 3 Comparisons of the magnetic field dependence of QTLW, γ(T)total, γ(T)intraL, γ(T)interL, of GaAs, at T=30K.
그림 Fig. 4 The relativity frequency(Δ𝜔) of absorption power, P(B) of GaAs, P(B) with γ(T)total, P(B) with γ (T)intraL, and P(B) with γ(T)interL, with λ=220μm, at T=30K.

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가설 설정

We see the γ(B)^(JL)increases as the magnetic field increases in most temperature, while the γ(B)^(JL)decreases as the magnetic field increases in some high field region(12Tesla ≤ B ≤ 16Tesla) at law temperature(T≤70K). We guess that this property caused from the geometrical characteristic of the sphalerite-type crystals. The analysis of the magnetic field dependence o fthe QTLW in the various magnetic fields is very important to understand the magnetic properties of materials.

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