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[국내논문] Micro/Millimeter-Wave Dielectric Indialite/Cordierite Glass-Ceramics Applied as LTCC and Direct Casting Substrates: Current Status and Prospects 원문보기 논문타임라인

한국세라믹학회지 = Journal of the Korean Ceramic Society, v.56 no.6, 2019년, pp.526 - 533  

Ohsato, Hitoshi (Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu) ,  Varghese, Jobin (Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu) ,  Vahera, Timo (Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu) ,  Kim, Jeong Seog (Department of Material Science and Engineering, Hoseo University) ,  Sebastian, Mailadil T. (Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu) ,  Jantunen, Heli (Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu) ,  Iwata, Makoto (Department of Physical Science and Engineering, Nagoya Institute of Technology)

Abstract ▼ AI-Helper 아이콘AI-Helper

Indialite/cordierite glass-ceramics demonstrate excellent microwave dielectric properties such as a low dielectric constant of 4.7 and an extremely high quality factor Qf of more than 200 × 103 GHz when crystallized at 1300℃/20 h, which are essential criteria for application to 5G/6G m...

Keyword

#Microwave and Millimeter-wave dielectrics   #Indialite/cordierite glass ceramics   #Surface crystal growth   #Volume crystallization   #Direct casting glass ceramic substrate  

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제안 방법

  • 23) The bulk densities of the sintered samples were measured by the Archimedes method. The microstructural analysis of the green tapes and thermally etched sintered samples was performed by scanning electron microscopy (FESEM; Zeiss Ultra Plus).

이론/모형

  • The microwave dielectric properties εr and Qf were determined by means of the Hakki-Coleman method,24,25) and TCf was estimated using the resonant cavity method.
  • The crystal structure of the specimens was measured via X-ray powder diffraction (XRPD; Bruker D8) using monochromatized Cu Kα radiation. The amount of indialite/cordierite was calculated by means of the Rietveld method using Fullprof Software.23) The bulk densities of the sintered samples were measured by the Archimedes method. The microstructural analysis of the green tapes and thermally etched sintered samples was performed by scanning electron microscopy (FESEM; Zeiss Ultra Plus).
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참고문헌 (31)
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  16. H. Ohsato, M. Terada, I. Kagomiya, K. Kawamura, K. Kakimoto, and E. S. Kim, "Sintering Conditions of Cordierite for Microwave/Millimeterwave Dielectrics," IEEE Trans. Ultrason. Ferroelectr. Freq. Control., 55 [5] 1082-85 (2008). 

  17. H. Ohsato, I. Kagomiya, M. Terada, and K. Kakimoto, "Origin of Improvement of Q Based on High Symmetry Accompanying Si-Al Disordering in Cordierite Millimeter-Wave Ceramics," J. Eur. Ceram. Soc., 30 [2] 315-18 (2010). 

    상세보기 crossref 타임라인에서 보기

  18. H. Ohsato, J. S. Kim, A. Y. Kim, C. I. Cheon, and K. W. Chae, "Millimeter-Wave Dielectric Properties of Cordierite/ Indialite Glass Ceramics," Jpn. J. Appl. Phys., 50 [9S2] 09NF01 (2011). 

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  19. H. Ohsato, J. S. Kim, C. I. Cheon, and I. Kagomiya, "Millimeter-Wave Dielectrics of Indialite/Cordierite Glass Ceramics: Estimating Si/Al Ordering by Volume and Covalency of Si/Al Octahedron," J. Ceram. Soc. Jpn., 121 [1416] 649-54 (2013). 

    상세보기 crossref 타임라인에서 보기

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    상세보기 crossref 타임라인에서 보기

  21. H. Ohsato, J. Varghese, A. Kan, J-S. Kim, I. Kagomiya, H. Ogawa, M. T. Sebastian, and H. Jantunen, "Volume Crystallization and Improved TCf of Indialite/Cordierite Glass Ceramics by $TiO_2$ Addition," J. Ceram. Soc. Jpn., in preparation. 

  22. H. Ohsato, J.-S. Kim, C.-I. Cheon, and I. Kagomiya, "Crystallization of Indialite/Cordierite Glass Ceramics for Millimeter-Wave Dielectrics," Ceram. Int., 41 S588-95 (2015). 

    상세보기 crossref 타임라인에서 보기

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  31. Y. T. Fei, S. J. Fan, R. Y. Sun, and M. Ishii, "Study on Phase Diagram of $Bi_2O_3-SiO_2$ System for Bridgman Growth of $Bi_4Si_3O_{12}$ Single Crystal," Prog. Cryst. Growth Charact. Mater., 40 [1-4] 183-88 (2000). 

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