[논문]Research for Hot Carrier Degradation in N-Type Bulk FinFETs

Park, Jinsu; Showdhury, Sanchari; Yoon, Geonju; Kim, Jaemin; Kwon, Keewon; Bae, Sangwoo; Kim, Jinseok; Yi, Junsin

doi:10.4313/jkem.2020.33.3.169

Research for Hot Carrier Degradation in N-Type Bulk FinFETs 원문보기

전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.33 no.3, 2020년, pp.169 - 172

Park, Jinsu (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Showdhury, Sanchari (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Yoon, Geonju (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Kim, Jaemin (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Kwon, Keewon (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Bae, Sangwoo (Technology Quality & Reliability Foundry Division, Samsung Electronics Co., LTD.) , Kim, Jinseok (Technology Quality & Reliability Foundry Division, Samsung Electronics Co., LTD.) , Yi, Junsin (Department of Electrical and Computer Engineering, Sungkyunkwan University)

Abstract ▼ AI-Helper

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is VG=VD, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

주제어

표/그림 (6)

그림 Fig. 1. (a) Channel hot electron injection and (b) drain avalanche hot carrier injection.
그림 Fig. 2. Definition of fin height, fin width, channel length, and pitch in the FinFETs.
그림 Fig. 3. Hot carrier stress condition in n-type bulk FinFETs.
그림 Fig. 4. (a) The shift of the ISUB peak when the channel length and (b) voltage position of the ISUB peak as a function.
그림 Fig. 5. Gm_max degradation with different baises at the stress condition of (a) V_G=V_D and (b) V_G=V_D/2.
그림 Fig. 6. The device lifetime with different stress bias conditions (a) V_G=V_D and (b) V_G=V_D/2.

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제안 방법

Therefore, finding a voltage that affects reliability by hot carrier has been studied as a very important research topic in recent years. In this paper, the substrate current is measured according to channel length and total change to investigate the characteristics of bulk FinFET and analyze and report the operating voltage affecting element reliability.

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