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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.25 no.4, 2021년, pp.774 - 777
김범수 (Dept. of Electronics Engineering, Korea National University of Transportation) , 이종원 (Dept. of Electronics Engineering, Korea National University of Transportation) , 강명곤 (Dept. of Electronics Engineering, Korea National University of Transportation)
In this paper, we analyzed the gate controllability of 3D NAND Flash Memory with Charge Trap Flash using Ferroelectric (CTF-F) structure. HfO2, a ferroelectric material, has a high-k characteristic besides polarization. Due to these characteristics, gate controllability is increased in CTF-F structu...
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