1,200V 급 Trench Gate Field stop IGBT 공정변수에 따른 스위칭 특성 연구 A Study on Switching Characteristics of 1,200V Trench Gate Field stop IGBT Process Variables원문보기
조창현
(Dept. of Energy IT Engineering, Far East University)
,
김대희
(Dept. of Energy IT Engineering, Far East University)
,
안병섭
(Dept. of Energy IT Engineering, Far East University)
,
강이구
(Dept. of Energy IT Engineering, Far East University)
IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 VCE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, VCE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 VCE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.
IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 VCE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, VCE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 VCE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.
IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown volt...
IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low VCE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, VCE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.
IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low VCE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, VCE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.
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