최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기반도체디스플레이기술학회지 = Journal of the semiconductor & display technology, v.21 no.4, 2022년, pp.138 - 143
정승환 (광운대학교 전자재료공학과) , 이형진 (광운대학교 전자재료공학과) , 이희재 (광운대학교 전자재료공학과) , 변동욱 (광운대학교 전자재료공학과) , 구상모 (광운대학교 전자재료공학과)
We analyzed the influence of post-annealing on Ga2O3/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga2O3) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga2O3 and the electr...
Dong, L., Jia, R., Xin, B., & Zhang, Y. (2016). Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga 2 O 3 films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 34(6), 060602.
Zhang, H., Deng, J., Pan, Z., Bai, Z., Kong, L., & Wang, J. (2017). Structural and optical properties of Nb-doped β-Ga 2 O 3 thin films deposited by RF magnetron sputtering. Vacuum, 146, 93-96
Yu, J., Nie, Z., Dong, L., Yuan, L., Li, D., Huang, Y., ... & Jia, R. (2019). Influence of annealing temperature on structure and photoelectrical performance of β-Ga 2 O 3 /4H-SiC heterojunction photodetectors. Journal of Alloys and Compounds, 798, 458-466
Byun, D. W., Lee, Y. J., Oh, J. M., Schweitz, M. A., & Koo, S. M. (2021). Morphological and electrical properties of β-Ga 2 O 3 /4H-SiC heterojunction diodes. Electronic Materials Letters, 17(6), 479-484.
Lee, Y. J., Schweitz, M. A., Oh, J. M., & Koo, S. M. (2020). Influence of annealing atmosphere on the characteristics of Ga2O3/4H-SiC n-n heterojunction diodes. Materials, 13(2), 434.
Qu, Y., Wu, Z., Ai, M., Guo, D., An, Y., Yang, H., ... & Tang, W. (2016). Enhanced Ga 2 O 3 /SiC ultraviolet photodetector with graphene top electrodes. Journal of Alloys and Compounds, 680, 247-251.
Phan, D. T., & Chung, G. S. (2011). The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering. Applied Surface Science, 257(9), 4339-4343.
Goyal, A., Yadav, B. S., Thakur, O. P., Kapoor, A. K., & Muralidharan, R. (2014). Effect of annealing on β-Ga 2 O 3 film grown by pulsed laser deposition technique. Journal of alloys and compounds, 583, 214-219.
Djurado, E., Bouvier, P., & Lucazeau, G. (2000). Crystallite size effect on the tetragonal-monoclinic transition of undoped nanocrystalline zirconia studied by XRD and Raman spectrometry. Journal of Solid-State Chemistry, 149(2), 399-407.
Tien, C. H., Hsiao, B. W., Chen, C. M., Chen, M. I., Chiang, J. L., & Wuu, D. S. (2020). Nitrogen and oxygen annealing effects on properties of aluminum-gallium oxide films grown by pulsed laser deposition. Ceramics International, 46(15), 24147-24154.
Fang, D., He, F., Xie, J., & Xue, L. (2020). Calibration of binding energy positions with C1s for XPS results. Journal of Wuhan University of Technology-Mater. Sci. Ed., 35(4), 711-718.
Akkaya, A., & Ayyildiz, E. (2016, April). Effects of post annealing on IVT characteristics of (Ni/Au)/Al0. 09Ga0. 91N Schottky barrier diodes. In Journal of Physics: Conference Series (Vol. 707, No. 1, p. 012015). IOP Publishing.
Zeghdar, K., Dehimi, L., Saadoune, A., & Sengouga, N. (2015). Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode. Journal of Semiconductors, 36(12), 124002.
Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current-voltage characteristics. Applied physics letters, 49(2), 85-87.
Li, A., Feng, Q., Zhang, J., Hu, Z., Feng, Z., Zhang, K., ... & Zhou, H. (2018). Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga 2 O 3 Schottky diodes. Superlattices and Microstructures, 119, 212-217.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.