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NTIS 바로가기한국결정성장학회지 = Journal of the Korean crystal growth and crystal technology, v.32 no.2, 2022년, pp.55 - 60
이승준 (한국세라믹기술원 반도체소재센터) , 유용재 (한국세라믹기술원 반도체소재센터) , 정성민 (한국세라믹기술원 반도체소재센터) , 배시영 (한국세라믹기술원 반도체소재센터) , 이원재 (동의대학교 신소재공학과) , 신윤지 (한국세라믹기술원 반도체소재센터)
In this study, a heat treatment experiment was conducted to select a new melt composition that can easily control the unintentionally doped nitrogen (N-UID) without degrading the SiC single crystal quality during TSSG process. The experiment was carried out for about 2 hours at a temperature of 1900...
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https://www.wolfspeed.com/.
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