[논문]열처리 및 전류인가 조건에서 Cu/Ni/Sn-2.5Ag 미세범프의 Ni-Sn 금속간화합물 성장 거동에 미치는 비전도성 필름의 영향 분석

김가희; 류효동; 권우빈; 손기락; 박영배

doi:10.6117/kmeps.2022.29.2.081

열처리 및 전류인가 조건에서 Cu/Ni/Sn-2.5Ag 미세범프의 Ni-Sn 금속간화합물 성장 거동에 미치는 비전도성 필름의 영향 분석
Non-conductive Film Effect on Ni-Sn Intermetallic Compounds Growth Kinetics of Cu/Ni/Sn-2.5Ag Microbump during Annealing and Current Stressing 원문보기

마이크로전자 및 패키징 학회지 = Journal of the Microelectronics and Packaging Society, v.29 no.2, 2022년, pp.81 - 89

김가희 (안동대학교 신소재공학부 청정에너지소재기술연구센터) , 류효동 (제이셋스테츠칩팩코리아(유)) , 권우빈 (안동대학교 신소재공학부 청정에너지소재기술연구센터) , 손기락 (한국전자통신연구원 DMC융합연구단) , 박영배 (안동대학교 신소재공학부 청정에너지소재기술연구센터)

초록
AI-Helper

비전도성 필름(non-conductive film, NCF)의 적용이 Cu/Ni/Sn-2.5Ag 미세범프의 금속간화합물(intermetallic compound, IMC) 성장 거동에 미치는 영향을 분석하기 위해 110, 130, 150℃의 온도 조건과 1.3×10⁵ A/cm²의 전류밀도 조건에서 실시간 열처리 및 electromigration(EM) 실험을 진행하였다. 그 결과, NCF 적용 유무와 열처리 및 EM 실험과 관계없이 Ni₃Sn₄ IMC 성장에 필요한 활성화에너지는 약 0.52 eV로 큰 차이는 보이지 않았다. 이는 Ni-Sn IMC의 성장속도가 Cu-Sn IMC 성장 속도보다 매우 느리며, 또한 Ni-Sn IMC의 성장 거동은 시간의 제곱근에 선형적으로 증가하므로 확산이 지배하는 동일한 반응기구를 가지며 NCF 적용에 따른 역응력(back stress)의 EM 억제 효과가 크지 않기 때문에 Ni₃Sn₄ IMC 성장에 필요한 활성화에너지는 차이가 나지 않는 것으로 판단된다.

Abstract ▼ AI-Helper

The in-situ electromigration(EM) and annealing test were performed at 110, 130, and 150℃ with a current density of 1.3×105 A/cm2 conditions to investigate the effect of non-conductive film (NCF) on growth kinetics of intermetallic compound (IMC) in Cu/Ni/Sn-2.5Ag microbump. As a result, the activation energy of the Ni3Sn4 IMC growth in the annealing and EM conditions according to the NCF application was about 0.52 eV, and there was no significant difference. This is because the growth rate of Ni-Sn IMC is much slower than that of Cu-Sn IMC, and the growth behavior of Ni-Sn IMC increases linearly with the square root of time, so it has the same reaction mechanism dominated by diffusion. In addition, there is no difference in the activation energy of the Ni3Sn4 IMC growth because the EM resistance effect of the back stress according to the NCF application is not large.

주제어

표/그림 (8)

그림 Fig. 1. Schematic diagrams of the cross-sectional Cu/Ni/Sn-2.5Ag microbump; (a) without and (b) with NCF.
그림 Fig. 2. Cross-sectional SEM images of as-bonded Cu/Ni/Sn-2.5Ag microbump; (a) without and (b) with NCF.
그림 Fig. 3. Sequential SEM images of cross-sectioned Cu/Ni/Sn-2.5Ag microbump without NCF during (a) annealing at 110, 130, 150°C and (b) current stressing at 110, 130, 150°C, 1.3×10⁵ A/cm² with downward electron flow.
그림 Fig. 4. Sequential SEM images of cross-sectioned Cu/Ni/Sn-2.5Ag microbump with NCF during (a) annealing at 110, 130, 150°C and (b) current stressing at 110, 130, 150°C, 1.3×10⁵ A/cm² with downward electron flow.
그림 Fig. 5. Thickness variations of Ni3Sn4 I MC phase o f Cu/Ni/Sn-2.5Ag microbump without NCF during (a) annealing and (b) current stressing.
그림 Fig. 6. Thickness variations of Ni3Sn4 I MC p hase o f Cu/Ni/Sn-2.5Ag microbump with NCF during (a) annealing and (b) current stressing.
그림 Fig. 7. Arrhenius plot of Ni3Sn4 IMC phase growth rate in Cu/Ni/Sn-2.5Ag microbump during annealing and current stressing; (a) without and (b) with NCF.
표 Table 1. Comparison of activation energy of annealing and EM according to NCF application.

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