최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기The journal of the institute of internet, broadcasting and communication : JIIBC, v.22 no.4, 2022년, pp.67 - 72
황지혜 (한국전자기술연구원) , 김기진 (한국전자기술연구원) , 김완식 (LIG넥스원(주)) , 한재섭 (LIG넥스원(주)) , 김민기 (LIG넥스원(주)) , 강봉모 (LIG넥스원(주)) , 김기철 (국방과학연구소) , 최증원 (국방과학연구소) , 박주만 (국방과학연구소)
This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent tr...
Wu Shaobing ,Gao Jianfeng, Wang Weibo, Zhang Junyun "W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology," IEEE Transactions on Electron Devices, Vol. 63, No. 10, pp. 3882-3886, 2016. DOI: https://doi.org/10.1109/TED.2016.2597244
Pin-Pin Huang; Tian-Wei Huang; Huei Wang; E.W. Lin; Yonghui Shu; G.S. Dow; R. Lai; M. Biedenbender. "A 94-GHz 0.35-W power amplifier module,"IEEE Transactions on Microwave Theory and Techniques, Vol. 45, No 12, pp. 2418-2423, 1997. DOI: https://doi.org/10.1109/22.643854
Zach Griffith, Miguel Urteaga, Petra Rowell, "A W-Band SSPA With 100-140-mW Pout , >20% PAE, and 26-30-dB S21 Gain Across 88-104 GHz," IEEE Microwave and Wireless Components Letters, Vol .30, No. 2, pp. 189-192, 2020. DOI:https://doi.org/10.1109/LMWC.2020.2964669
K. Datta and H. Hashemi, "High-breakdown, high-fmax multiport stacked-transistor topologies for the W-band power amplifiers," IEEE J. Solid-State Circuits, vol. 52, no. 5, pp. 1305-1319, May 2017. DOI: https://doi.org/10.1109/JSSC.2016.2641464
Satoshi Masuda; Toshihiro Ohki; Kozo Makiyama; Masahito Kanamura; Naoya Okamoto; Hisao Shigematsu, "GaN MMIC amplifiers for W-band transceivers," IEEE European Microwave Integrated Circuits Conference, pp.443-446, 2009.
C.R. Chappidi and K. Sengupta, "A frequency-reconfigurable mm-Wave power amplifier with active-impedance synthesis in an asymmetrical non-isolated combiner:Analysis and Design", IEEE ISSCC Dig. Tech. Papers, Feb. Vol. 52, No. 8 , pp.1990-2008, 2017. DOI: https://doi.org/10.1109/JSSC.2017.2686843
M. Micovic, A. Kurdoghlian, A. Margomenos, D. F. Brown, K. Shinohara, S. Burnham, I. Milosavljevic, R. Bowen, A.J. Williams, P. Hashimoto, R. Grabar, C. Butler, A. Schmitz, P. J. Willadsen, D. H. Chow, " 92-96 GHz GaN Power Amplifiers", IEEE IEEE/MTT-S International Microwave Symposium Digest, 2012. DOI:https://doi.org/10.1109/MWSYM.2012.6259572
Y. Nakasha, S. Masuda, K. Makiyama, T. Ohki, M. Kanamura, N. Okamoto, T. Tajima, T. Seino, K. Imanishi, T. Kikkawa and N. Hara, "E-Band 85-mW Oscillator and I.3W Amplifier IC's using 0.12-llm GaN HEMTs for Millimeter-wave Transceivers," IEEE CSIC Symposium, 2010 DOI: https://doi.org/10.1109/CSICS.2010.5619643
D.F. Brown, A. Williams, K. Shinohara, A. Kurdoghlian., l. Milosavljevic, P. Hashimoto, R. Grabar, S. Burnham, C. Butler, P. Willadsen, and M. Micovic, "W-Band Power Performance of AIGaN/GaN DHFETs with Regrown n+ GaN Ohmic Cointacts by MBE", IEEE IEDM Dig., pp.19.3.1-19.3.4, 2011 DOI: https://doi.org/10.1109/IEDM.2011.6131584
Joohwa Kim; Hayg Dabag; Peter Asbeck; James F. Buckwalter, "Q -Band and W -Band Power Amplifiers in 45-nm CMOS SOI", IEEE Transactions on Microwave Theory and Techniques., Vol.60, No. 6, pp. 1870-1877, 2012 DOI:https://doi.org/10.1109/TMTT.2012.2193593
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
출판사/학술단체 등이 한시적으로 특별한 프로모션 또는 일정기간 경과 후 접근을 허용하여, 출판사/학술단체 등의 사이트에서 이용 가능한 논문
※ AI-Helper는 부적절한 답변을 할 수 있습니다.