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NTIS 바로가기전자통신동향분석 = Electronics and telecommunications trends, v.37 no.5, 2022년, pp.11 - 21
안호균 (국방RF부품연구실) , 이상흥 (국방RF부품연구실) , 김성일 (국방RF패키징연구실) , 노윤섭 (국방RF부품연구실) , 장성재 (국방RF부품연구실) , 정현욱 (국방RF부품연구실) , 임종원 (DMC융합연구단)
GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high ...
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김민철, "초고주파 전력증폭기 MMIC 기술 동향 및 개발 현황," 제14회 군수용 초고주파부품 워크샵, 2021.
권호상 외 , "S-대역 300W급 GaN HEMT 내부 정합 전력증폭기," 한국전자파학회논문지, 제31권 제1호, 2020, pp. 43-50.
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UMS, 2022_Selection_Guide, https://www.ums-rf.com/products/product-support/brochures/
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T. KIm et al., "High linear K-/Ka-band SPDT switch based on traveling-wave concept in a 150-nm GaN pHEMT process," IEEE Microw. Wirel. Compon. Lett., vol. 32, no. 8, 2022.
노윤섭 외, "C 대역 0.2㎛ GaN 공정을 이용한 30W급 SPDT 스위치 MMIC 개발," 대한전자공학회 추계학술대회, 2020.
노윤섭 외, "0.2㎛ GaN 공정을 이용한 광대역 SPDT 스위치 MMIC 개발," 한국전자파학회 동계종합학술대회, 제3권 제1호, 2021.
노윤섭 외 , "C 대역 GaN 저잡음증폭기 집적회로 설계," 한국전자파학회 하계종합학술대회, 제9권 제1호, 2021.
노윤섭 외, "0.2㎛ GaN 공정을 이용한 X 대역 20W급 고전력 SPDT MMIC 스위치 설계," 대한전자공학회 하계종합학술대회, 2021.
노윤섭 외 , "X 대역 GaN 저잡음증폭기 MMIC 연구," 한국전자파학회 하계종합학술대회, 2022.
노윤섭 외, "X 대역 25W급 GaN 전력증폭기 MMIC 개발," 통신정보합동학술대회, 2022.
노윤섭 외, "Ku대역 GaN 저잡음증폭기 집적회로 설계에 관한 연구," 한국통신학회 종합학술대회, 2021.
노윤섭 외, "0.2㎛ GaN HEMT 공정을 이용한 Ku대역 GaN SPDT 스위치 MMIC 개발," 한국전자파학회 동계종합학술대회, 제4권 제1호, 2022.
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