[논문]Wide-bandgap 전력반도체 패키징을 위한 Ag 소결 다이접합 기술

김민수; 김동진

doi:10.6117/kmeps.2023.30.1.01

Wide-bandgap 전력반도체 패키징을 위한 Ag 소결 다이접합 기술
Ag Sintering Die Attach Technology for Wide-bandgap Power Semiconductor Packaging 원문보기

마이크로전자 및 패키징 학회지 = Journal of the Microelectronics and Packaging Society, v.30 no.1, 2023년, pp.1 - 16

김민수 (한국생산기술연구원 접합적층연구부문) , 김동진 (한국생산기술연구원 접합적층연구부문)

초록
AI-Helper

전기차용 전력변환모듈의 성능향상 요구와 종래의 Si 전력반도체의 한계 극복을 위해 차세대 전력반도체인 wide-bandgap (WBG) 기반 전력반도체로의 전환이 가속화되고 있다. WBG 전력반도체로의 전환을 위해 전력변환모듈 패키징 소재 역시 높은 고온 내구성을 요구받고 있다. 전력변환모듈 패키징 공정 중 하나인 Ag 소결 다이접합 기술은 종래의 고온용 Pb 솔더링의 대체 기술로 주목받고 있다. 본 논문에서는 Ag 소결 다이접합 기술 관련 최신 연구동향에 대해 소개하고자 한다. 소결 다이접합 공정 조건에 따른 접합부 특성을 비교하고 Ag 소결층의 3차원 이미지 구현에 따른 다공성 Ag 소결 접합부의 물성 측정 방법론에 대해 고찰하였다. 또한 열충격 및 파워사이클 신뢰성 평가 연구동향을 분석하였다.

Abstract ▼ AI-Helper

Recently, the shift to next-generation wide-bandgap (WBG) power semiconductor for electric vehicle is accelerated due to the need to improve power conversion efficiency and to overcome the limitation of conventional Si power semiconductor. With the adoption of WBG semiconductor, it is also required that the packaging materials for power modules have high temperature durability. As an alternative to conventional high-temperature Pb-based solder, Ag sintering die attach, which is one of the power module packaging process, is receiving attention. In this study, we will introduce the recent research trends on the Ag sintering die attach process. The effects of sintering parameters on the bonding properties and methodology on the exact physical properties of Ag sintered layer by the realization 3D image are discussed. In addition, trends in thermal shock and power cycle reliability test results for power module are discussed.

주제어

표/그림 (25)

그림 Fig. 1. Impact of SiC power semiconductor on the packaging materials choice.⁹⁾
그림 Fig. 2. DA5 - Automotive release process for lead-free die attach materials.¹³⁾
그림 Fig. 3. Schematic diagram of Ag sintering mechanism: (a) typical Ag sintering process and temperature profile, (b) initial Ag paste, (b) thermal decomposition of solvent vehicle or organic substances, (c) necking formation between Ag particle and (d) densification of Ag porous structure.
그림 Fig. 4. Effects of process conditions on the die shear strength of pressure-assisted (black square) and pressureless (red circle) Ag sintered joints: (a) sintering temperature and (b) sintering time (excluding heating and preheating time).^16,17,19-37)
표 Table 1. Recommended sinter bonding process conditions for commercialized pressure-assisted type Ag sintering paste
표 Table 2. Recommended sinter bonding process conditions for commercialized pressureless type Ag sintering paste
그림 Fig. 5. (a) Schematic diagram of Ag nano-volcanic eruption for Ag sintering in air and (b) calculated phase diagram and potential diagram of Ag-O binary system.⁴⁰⁾
그림 Fig. 6. Effects of surface finishes (Ag, Au and Cu) on the die shear strength of (a) pressure-assisted and (b) pressureless Ag sintered joints with various sintering temperatures.^16,17,19-37)
그림 Fig. 7. Micro-scale 3D finite element method (FEM) simulation: (a) 3D tomography acquisition for Ag sintered layer by in-situ serial sectioning by FIB/SEM and (b,c) contour figures of the equivalent stress and plastic strain under tensile loading (b) at 298 K (room temperature) and at 413 K (high temperature).⁴⁶⁾
$Fig. 8. (a) Reconstructed 3D images for sintered Ag structures using FIB/SEM fabricated with different sintering process conditions, (b) Yield stresses for pure shear loading and pure hydrostatic loading, (c) elastic modulus as a function of fractional density of sintered Ag.<sup>51)</sup>$ 그림 Fig. 8. (a) Reconstructed 3D images for sintered Ag structures using FIB/SEM fabricated with different sintering process conditions, (b) Yield stresses for pure shear loading and pure hydrostatic loading, (c) elastic modulus as a function of fractional density of sintered Ag.⁵¹⁾
그림 Fig. 9. (a) Ag sintered micro-pillar using focused ion beam and (b) nanotomography on the pore structure evolution (pore growth or disappearance) under thermal loading using full-field transmission X-rays microscope with synchrotron radiation facility.⁵³⁾
그림 Fig. 11. Degradations of the cross section SEM images of GaN/DBA die-attached structure by thermal shock cycling. (Ag paste is Ag flakes and submicron Ag particles paste).⁵⁵⁾
그림 Fig. 10. Change of shear strength of Ag sintered joint with GaN chip and DBA substrate depend on thermal shocks.⁵⁵⁾
그림 Fig. 12. EDX face mapping results. Oxidation was not detected in this study.⁵⁵⁾
그림 Fig. 13. Fracture surface analysis results.⁵⁵⁾
그림 Fig. 14. Finite element method (FEM) simulation results. Thermal shocks induced non-uniform plastic deformation at the Ag-Al interfaces..⁵⁵⁾
그림 Fig. 15. Ni metallization dependence die-shear strength of Ag sintered joint.⁵⁶⁾
그림 Fig. 16. FEM simulation results. Effect on the DBA substrate with Ni metallization and without Ni metallization.⁵⁷⁾
그림 Fig. 18. (a) n-doped 4H SiC wafer. (b) Heater pattern on the SiC-TEG chip. (c) Schematic diagram of the cross section of the SiC-TEG chip.⁶⁰⁾
그림 Fig. 17. (a) SEM images of cross-section of sintered Ag-Au joint and (b) after 1000 thermal shock cycling process, (c) the magnified view of initial Ag-Au joint, (d) the magnified view of Ag-Au joint at the compression section and (e) Ag-Au joint at the compression section and (f) at the tensile section after 1000 thermal shock cycles.⁵⁸⁾
그림 Fig. 19. SEM cross section image of the (a) Pb-5Sn solder joint, (d) Sn-Cu based solder joint and (g) the SAC-based solder joint, (b), (e), and (h) the bonded interface between the SiC-TEG chip and solder materials, and (c), (f), and (i) the bonded interface between the solder materials and DBC substrate after power cycling test.⁶⁰⁾
그림 Fig. 20. (a) Cross section of the die-attached structure by Ag sinter joining after 20,000 power cycles. (b) Bonding interface between SiC-TEG and sintered Ag paste. (c) Bonding interface between the sintered Ag paste and DBC substrate. (d) EDS element line scanning of the interface between the sintered Ag paste and substrate.⁶⁰⁾
그림 Fig. 21. Schematics of the (a) cross-section of die attach joint and (b) SiC diode module, and (c) image of the prepared SiC diode module.³⁹⁾
그림 Fig. 22. Forward voltage and junction to case thermal resistance variation during the power cycling test.³⁹⁾
그림 Fig. 23. Structure functions of the Ag sinter-joining SiC diode module before and after the power cycling.³⁹⁾

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