최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.27 no.1, 2023년, pp.65 - 70
조근호 (Department of Electronic Engineering, Seokyeong University)
More than 10,000 Carbon NanoTube Field Effect Transistors (CNTFETs), which have advantages such as high carrier mobility, large saturation velocity, low intrinsic capacitance, flexibility, and transparency, have been successfully integrated into one semiconductor chip using conventional semiconducto...
A. D. Franklin, M. C. Hersam, and H.-S. P.?Wong, "Carbon nanotube transistors: Making?electronics from molecules," Science, vol.78, no.?6621, pp.726-732, 2022.?DOI: 10.1126/science.abp8278
S. Zhang et al., "Emerging Internet of Things?driven carbon nanotubes-based devices," Nano?Research, vol.15, no.5, pp.4613-4637, 2022.?DOI: 10.1007/s12274-021-3986-7
R. Chen et al., "Carbon Nanotube SRAM in?5-nm Technology Node Design, Optimization, and?Performance Evaluation-Part I: CNFET Transistor?Optimization," IEEE Transactions on Very Large?Scale Integration (VLSI) Systems, vol.30, no.4,?pp.432-439, 2022.?DOI: 10.1109/TVLSI.2022.3146125
R. Chen et al., "Carbon Nanotube SRAM in?5-nm Technology Node Design, Optimization, and?Performance Evaluation-Part II: CNT Interconnect?Optimization," IEEE Transactions on Very Large?Scale Integration (VLSI) Systems, vol.30, no.4,?pp.440-448, 2022.?DOI: 10.1109/TVLSI.2022.3146064
J. Deng and H. . -S. P. Wong, "A Compact?SPICE Model for Carbon-Nanotube Field-Effect?Transistors Including Nonidealities and Its?Application-Part I: Model of the Intrinsic Channel?Region," IEEE Transactions on Electron Devices,?vol.54, no.12, pp.3186-3194, 2007.?DOI: 10.1109/TED.2007.909030
J. Deng and H. . -S. P. Wong, "A Compact?SPICE Model for Carbon-Nanotube Field-Effect?Transistors Including Nonidealities and Its?Application-Part II: Full Device Model and Circuit?Performance Benchmarking," IEEE Transactions?on Electron Devices, vol.54, no.12, pp.3195-3205,?2007. DOI: 10.1109/TED.2007.909043
Yang et al., "High-performance carbon nanotube?field-effect transistors with electron mobility of?39.4 cm 2 ?V -1 ?s -1 ? using anion-π interaction doping,"?Carbon, vol.203, pp.761-769, 2023.?DOI: 10.1016/j.carbon.2022.12.025
J. Zhou et al., "Carbon Nanotube Radiofrequency?Transistors With fT/fMAX of 376/318 GHz," IEEE?Electron Device Letters, vol.44, no.2, pp.329-332,?2023. DOI: 10.1109/LED.2022.3227133
C. Liu et al., "Complementary Transistors?Based on Aligned Semiconducting Carbon Nanotube?Arrays," ACS Nano, vol.16, no.12, pp.21482-21490,?2022. DOI: 10.1021/acsnano.2c10007
G. Long et al., "Carbon nanotube-based?flexible high-speed circuits with sub-nanosecond?stage delays," Nature Communications, vol.13,?no.1, pp.6734,
D.-H. Shin et al., "Low-Power Complementary?Inverter Based on Graphene/Carbon-Nanotube?and Graphene/MoS2 Barristors," Nanomaterials,?vol.12, no.21, p.3820, 2022.?DOI: 10.3390/nano12213820
Q. Huang et al., "Intrinsically flexible allcarbon-nanotube electronics enabled by a hybrid?organic-inorganic gate dielectric," npj Flex. Electron.,?vol.6, no.1, p.61, 2022.?DOI: 10.1038/s41528-022-00190-8
G. Hills et al., "Modern microprocessor built?from complementary carbon nanotube transistors,"?Nature, vol.572, no.7771, pp.595-602, 2019.?DOI: 10.1038/s41586-019-1493-8
R. S. Singh et al., "Precise Deposition of?Carbon Nanotube Bundles by Inkjet-Printing on?a CMOS-Compatible Platform.," Mater. (Basel,?Switzerland), vol.15, no.14, 2022.?DOI: 10.3390/ma15144935
A. Valluri and S. Musala, "Low leakage,?differential read scheme CNTFET based 9T SRAM?cells for Low Power applications," Int. J. Electron.,?pp.1-22, 2022.?DOI: 10.1080/00207217.2022.2148289
V. Bakhtiary, A. Amirany, M. H. Moaiyeri,?and K. Jafari, "An SEU-hardened ternary SRAM?design based on efficient ternary C-elements using?CNTFET technology," Microelectron Reliability,?vol.140, p.114881, 2023.?DOI: 10.1016/j.microrel.2022.114881
A. Sachdeva, D. Kumar, and E. Abbasian, "A?carbon nano-tube field effect transistor based?stable, low-power 8T static random access memory?cell with improved write access time," AEU - International Journal of Electronics and Communications,?vol.162, 2023. DOI: 10.1016/j.aeue.2023.154565
A. Darabi, M. R. Salehi, and E. Abiri, "Onesided 10T static-random access memory cell for?energy-efficient and noise-immune internet of?things applications," International Journal of?Circuit and Theory Applications, vol.51, no.1,?pp.379-397, 2023. DOI: 10.1002/cta.3408
M. Elangovan and M. Muthukrishnan, "Design?of High Stability and Low Power 7T SRAM Cell in?32-NM CNTFET Technology," Journal of Circuits,?Systems and Computers, vol.31, no.13, 2022.?DOI: 10.1142/S0218126622502334
N. Hajizadeh Bastani and K. Navi, "A LowPower and Robust Quaternary SRAM Cell for?Nanoelectronics," Analog Integrated Circuits and?Signal Processing, vol.111, no.3, pp.483-493,?2022. DOI: 10.1007/s10470-022-02031-0
G. Cho, "A Study on the Circuit Design?Method of CNTFET SRAM Considering Carbon?Nanotube Density," Journal of IKEEE, vol.25,?no.3, pp.473-478, 2021.
PTM Models, http://ptm.asu.edu/
CNFET Models. https://nano.stanford.edu/downloads/stanford-cnfet-model/stanford-cnfet-model-hspice?
※ AI-Helper는 부적절한 답변을 할 수 있습니다.