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NTIS 바로가기한국결정성장학회지 = Journal of the Korean crystal growth and crystal technology, v.33 no.2, 2023년, pp.45 - 53
김경화 (한국해양대학교 나노반도체공학과) , 박선우 (한국해양대학교 나노반도체공학과) , 문수현 (한국해양대학교 나노반도체공학과) , 안형수 (한국해양대학교 나노반도체공학과) , 이재학 (한국해양대학교 나노반도체공학과) , 양민 (한국해양대학교 나노반도체공학과) , 전영태 (한국해양대학교 나노반도체공학과) , 이삼녕 (한국해양대학교 나노반도체공학과) , 이원재 (동의대학교 신소재공학부) , 구상모 (광운대학교 전자재료공학과) , 김석환 (안동대학교 자연과학대학 물리학과)
The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 2...
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