참고문헌 (13)

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5. M. Dammann, M. Casar, P. Waltereit, W. Bronner, H. Konstanzer, R. Quay, S. Muller, M. Mikulla, O. Ambacher, P. van der Wel, T. Rodle, R. Behtash, F. Bourgeois, and K. Riepe, "Reliability of AlGaN/GaN HEMTs under DC- and RF-operation," in Reliability of Compound Semiconductors Digest(ROCS), pp. 19-32, 2009.？ 

6. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura, and T. Ogura, "Influence of Surface Defect Charge at AlGaN-GaNHEMT upon Schottky Gate Leakage Current and Breakdown Voltage," IEEE Transactions on Electron Devices, Vol. 52, No. 2, pp. 159-164, 2005.？ 

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8. R. Coffie, S. Heikman, D. Buttari, S. Keller, A. Chini, L. Shen, N. Zhang, A. Jimenez, D. Jena, and U. Mishra, "PGaN/AlGaN/GaN High Electron Mobility Transistors," in Device Research Conference Digest(DRC), pp. 25-26, 2002.？ 

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10. R. Vetury, N. Zhang, S. Keller, and U. Mishra, "The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs," IEEE Transactions on Electron Devices, Vol. 48, No. 3, pp. 560-566, 2001.？ 

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11. O. Schuler, H. Fourre, R. Fauquembergue, and A. Cappy, "Influence of Parasitic Capacitances on the Performance of Passivated InAlAs/InGaAs HEMTs in the Millimeter Wave Range," in IPRM International Conference on Indium Phosphide and Related Materials, pp. 646-649, 1996.？ 

12. D. Blackburn, "Temperature Measurements of Semiconductor Devices - A Review," in IEEE Semiconductor Thermal Measurement and Management Symposium, pp. 70-80, Sept. 2004.？ 

13. S. Feng, P. Hu, G. Zhang, C. Guo, X. Xie, and T. Chen, "Determination of Channel Temperature of AlGaN/GaN HEMT by Electrical Method," in Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE, pp. 165-169, 2010. 

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