[논문]구리 나노와이어 투명 전극의 산화 방지 기술

이기업; 노호균; 김형구; 하준석

doi:10.6117/kmeps.2023.30.2.021

구리 나노와이어 투명 전극의 산화 방지 기술
Review on Oxidation Resistance Technology for Copper Nanowire Transparent Electrodes 원문보기

마이크로전자 및 패키징 학회지 = Journal of the Microelectronics and Packaging Society, v.30 no.2, 2023년, pp.21 - 32

이기업 (전남대학교 화학공학과) , 노호균 (에너지융복합전문핵심연구지원센터) , 김형구 (한국광기술원 광반도체연구센터) , 하준석 (전남대학교 화학공학과)

초록
AI-Helper

구리 나노와이어(CuNW)는 전기 전도도가 우수할 뿐만 아니라 높은 기계적 유연성과 비용 효율성 등의 장점이 있다. 그러나 구리 나노와이어는 산화가 쉽게 일어나기 때문에 투명 전극의 특성까지도 저하될 수 있다는 단점 또한 존재한다. 따라서, 이러한 문제점을 해결하기 위한 연구들이 진행되고 있다. 이에 본 고에서는 탄소 기반 물질, 금속, 전도성 고분자 등의 코팅용 소재를 활용하여 구리 나노와이어 투명전극의 산화를 방지하고 안정성을 향상시키기 위한 다양한 방법과 연구를 소개한다. 이를 통해 구리 나노와이어 기반 기술의 발전과 산화에 대한 문제를 해결할 수 있는 방안들을 제공하고자 한다.

Abstract ▼ AI-Helper

CuNWs(Copper nanowires) are attracting attention as a transparent electrode material because of their excellent electrical conductivity, high mechanical flexibility, and cost-effectiveness. However, since copper nanowires are easily oxidized, there is a disadvantage that properties of the transparent electrode may be deteriorated due to this, and researches are being conducted to improve this. Accordingly, in this review, various methods and studies to prevent oxidation and improve stability of copper nanowire transparent electrodes by using coating materials such as carbon-based materials, metals, and conductive polymers are introduced. Through this, we intend to provide solutions to solve the problem of development and oxidation of copper nanowire-based technology.

주제어

표/그림 (13)

그림 Fig. 1. Relative indicators of materials for copper nanowire oxidation protection
그림 Fig. 3. A graphene layer grown on Cu NWs at 400℃. (a) Raman spectra. (b-e) HRTEM images with increasing magnifications. (f) Line profile of the area marked with a dashed blue line in (d). R_s vs. time plots for both Cu NW TCEs and graphene-coated Cu NW TCEs in harsh oxidation environments: (g) Oxidation at room temperature, (h) Oxidation at 240℃ in the presence of 300 sccm oxygen, (i) Basic test in the presence of 0.5 M NaCl and (j) Acidic test in the presence of 0.5 M H2_SO₄.³²⁾
그림 Fig. 2. (a) Schematic diagrams of graphene grown by the low temperature carbon enclosed chemical vapor deposition process. (b) Temperature distribution in the furnace pointing the sample position at 400℃.³²⁾
그림 Fig. 4. Aging tests of the RGO/CuNWs and CuNWs transparent conductive electrodes in air at room temperature (a), at 60℃ (b), and at 100℃ (c).³⁵⁾
그림 Fig. 5. (a) Schematic of the flexible SCG/CuNW/UVR and PG/CuNW/UVR films under ambient atmosphere. (b-e) Stability tests of bare CuNWs, CuNW/UVR, PG/CuNW/UVR and SCG/CuNW/UVR films in atmosphere environment (b-c), at elevated temperature (d) and in strong acidic solution (e). The data in (c) is extracted for ΔR/R₀ < 1 from (b).³⁷⁾
그림 Fig. 6. SEM images of (a) CuNWs, (b) Cu@Ag-amine core-shell structure, and (c) Cu@Ag core-shell nanowires. TEM image of the cross section for Cu@Ag core-shell nanowires (d), and the corresponding elemental mapping images (e-g). The samples all with 20wt% of silver. (h) Schematic diagram of the galvanic replacement free formation of Cu@Ag core-shell nanowires.⁴⁴⁾
그림 Fig. 7. (a) Relative resistance variation in the CuNW and Cu@Ni NW network after placing in atmospheric environment. Cu 2p_3/2 XPS pattern in (b) CuNW network and (c) Cu@Ni NW network after placing in atmospheric environment for 168 h.⁴⁶⁾
그림 Fig. 8. SEM images of (a) Pure CuNWs and (b) The CuNWs coated with PEDOT:PSS. Schematic of the preparation of transparent conducting films using the Mayer rod method. (c) Transparent conducting film of CuNWs (d) Transparent conducting film of CuNWs with PEDOT:PSS coating.⁴⁷⁾
그림 Fig. 9. Sheet resistance over time for CuNWs and CuNWs coated with PEDOT:PSS.⁴⁷⁾
그림 Fig. 10. The cross-sectional and overview showing the fabrication process of fully embedded CuNWs/PDMS conductors.⁵¹⁾
그림 Fig. 11. Performance comparison between semi-embedded and fully embedded CuNWs/PDMS structures. (a, b) Relative resistance of the conductors during the stretching/releasing process with the peak value of 10%, 20%, and 30% strain. (c) The change of relative resistance in harsh environment (85℃/85%RH). (d) After 85℃/ 85%RH test, the relative resistance of conductors during the stretching/releasing process with the peak value of 20% strain.⁵¹⁾
그림 Fig. 12. (a) Schematic of the LPCVD system for h-BN encapsulation on Cu NWs. Schematics of (b) As-transferred Cu NWs network on a target substrate, (c) Encapsulation of h-BN shell on Cu NW, and (d) 3D encapsulation of h-BN shell on Cu NWs. SEM images of Cu NWs heated at 900℃ for 30s, (e) in Cu pocket without borazane precursor, (f) with borazane precursor at T1 zone, and (g) with borazane precursor both at T1 and T2 zones.⁵³⁾
그림 Fig. 13. (a) Sheet resistance as a function of time for Cu@h-BN NWs synthesized at different temperatures. Samples were tested by heating at 200℃ in air. (b, c) Stability tests at 200℃ for various Cu NWs. (d) Photographs of Cu NWs, Cu NWs/PMMA, and Cu@h-BN NWs after heating at 200℃ for 8 h. (e, f) Stability tests at 300 and 400℃ for Cu@h-BN NWs. (g) Long-term stability test under humidity conditions (85℃ and 95%RH) for Cu NWs and Cu@h-BN NWs. (h, i) Chemical stability tests in base solution [NaOH (0.5 mol/L, pH = 12)] and strong oxidizer [H₂O₂ (0.65 mol/L)] for 30 min. The logo was adapted with permission from Xiamen University.⁵³⁾

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저자의 다른 논문 :

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