[논문]기판과 무연솔더 계면에 전사된 그래핀 층의 금속간화합물 성장 지연 효과

고용호; 유동열

doi:10.6117/kmeps.2023.30.3.064

기판과 무연솔더 계면에 전사된 그래핀 층의 금속간화합물 성장 지연 효과
Retarding Effect of Transferred Graphene Layers on Intermetallic Compound Growth at The Interface between A Substrate and Pb-free Solder 원문보기

마이크로전자 및 패키징 학회지 = Journal of the Microelectronics and Packaging Society, v.30 no.3, 2023년, pp.64 - 72

고용호 (한국생산기술연구원 접합적층연구부문) , 유동열 (한국생산기술연구원 접합적층연구부문)

초록
AI-Helper

본 연구에서는 Cu 기판 위에 그래핀(graphene)을 전사하고 Cu 기판 위에 Sn-3.0Ag-0.5Cu 무연(Pb-free) 솔더페이스트를 도포한 후에, 리플로우 솔더링 공정 및 다양한 온도(125, 150, 175 ℃)에서 등온 시효 1000 h 동안 Cu 기판과 솔더 계면에서 발생하는 금속간화합물(intermetallic compound, IMC)의 형성과 성장 거동에 전사된 graphene의 미치는 영향에 대하여 보고하였다. Graphene이 계면에 존재하는 경우 graphene이 존재하지 않은 경우와 비교할 때, 솔더링 공정 및 시효 동안 형성되어 성장하는 Cu₆Sn₅과 Cu₃Sn IMC의 두께가 감소하는 것을 확인 할 수 있었다. 또한, 계면에 존재하는 전사된 graphene 층(layer)은 시효 온도와 시간에 따라 IMC들의 성장 거동과 관계된 Cu₆Sn₅과 Cu₃Sn IMC의 성장 속도 상수와 성장 속도 상수 제곱 값들도 크게 감소시킬 수 있는 것으로 나타났다.

Abstract ▼ AI-Helper

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu6Sn5 and Cu3Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu6Sn5 and Cu3Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

주제어

표/그림 (10)

그림 Fig. 1. Schematic diagram of graphene transfer and sample fabrication processes.
그림 Fig. 2. Comparison of Raman spectra on the surface of Cu substrate without graphene and with transferred graphene.
그림 Fig. 3. Cross-sectional SEM images at the interface after the reflow soldering process.
그림 Fig. 4. Cross-sectional SEM images at the interface during isothermal aging for 1000 h at 125 ℃.
그림 Fig. 5. Cross-sectional SEM images at the interface during isothermal aging for 1000 h at 150 ℃.
그림 Fig. 6. Cross-sectional SEM images at the interface during isothermal aging for 1000 h at 175 ℃.
그림 Fig. 7. Thickness of Cu₆Sn₅ IMC versus square root of aging time for the aging temperature: (a) 125 ℃, (b) 150 ℃, and (c) 175 ℃.
그림 Fig. 8. Thickness of Cu3Sn IMC versus square root of aging time for the aging temperature: (a) 125 ℃, (b) 150 ℃, and (c) 175 ℃.
표 Table 1. Calculated values of IMCs growth rate constant (k)
표 Table 2. Square of calculated values of IMCs growth rate constant (k²)

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