최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Applied physics letters, v.78 no.20, 2001년, pp.3139 - 3141
Shang, Huiling , White, Marvin H. , Guarini, Kathryn W. , Solomon, Paul , Cartier, Eduard , McFeely, Fenton R. , Yurkas, John J. , Lee, Wen-Chin
The Si/SiO2 interface in 100-nm-thick chemical vapor deposition (CVD) tungsten gate metal-oxide-semiconductor (MOS) structures exhibits high interface state densities (Dit0>5×1011/cm2 eV) after conventional forming gas anneals over varying temperatures and times. In this letter, we show this i...
Ushiki, T., Yu, Mo-Chiun, Hirano, Y., Shimada, H., Morita, M., Ohmi, T.. Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing. IEEE transactions on electron devices, vol.44, no.9, 1467-1472.
0163-1918 Tech. Dig. Int. Electron Devices Meet. Wong H.-S. 705 1993 1993
Shang, Huiling, White, Marvin H.. An ultra-thin midgap gate FDSOI MOSFET. Solid-state electronics, vol.44, no.9, 1621-1625.
Buchanan, D. A., McFeely, F. R., Yurkas, J. J.. Fabrication of midgap metal gates compatible with ultrathin dielectrics. Applied physics letters, vol.73, no.12, 1676-1678.
Noda, Hiromasa, Sakiyama, Hideyuki, Goto, Yasushi, Kure, Tokuo, Kimura, Shin"ichiro. Tungsten Gate Technology for Quarter-Micron Application. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.35, no.b2, 807-811.
Hickmott, T. W.. Annealing of surface states in polycrystalline-silicon-gate capacitors. Journal of applied physics, vol.48, no.2, 723-733.
Frauenfelder, R.. Solution and Diffusion of Hydrogen in Tungsten. The Journal of vacuum science and technology, vol.6, no.3, 388-397.
Kuhn, M.. A quasi-static technique for MOS C-V and surface state measurements. Solid-state electronics, vol.13, no.6, 873-885.
Reed, Michael L., Plummer, James D.. Chemistry of Si-SiO2 interface trap annealing. Journal of applied physics, vol.63, no.12, 5776-5793.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.