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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.34 no.2, 2013년, pp.202 - 204
Injun Hwang (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Jongseob Kim (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Hyuk Soon Choi (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Hyoji Choi (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Jaewon Lee (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Kyung Yeon Kim (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Jong-Bong Park (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Jae Cheol Lee (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Jongbong Ha (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Jaejoon Oh (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , Jaikwang Shin (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea) , U-In Chung (Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea)
The impact of gate metals on the threshold voltage (VTH) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by fabricating p-GaN gate HEMTs with different work function gate metals-Ni and W. p-GaN gate HEMTs incorporate a p-GaN layer under the gate electrod...
Proc ISPSD 1.6 kV, 2.9 $\hbox{m}\Omega\ \hbox{cm2}$ normally-off p-GaN HEMT device hwang 2012 41
Mizutani, T., Ito, M., Kishimoto, S., Nakamura, F.. AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.28, no.7, 549-551.
Physics of Semiconductor Devices sze 0
Proc ISPSD Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer hilt 2010 347
Meneghini, Matteo, de Santi, Carlo, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, Daisuke, Zanoni, Enrico, Meneghesso, Gaudenzio. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.33, no.3, 375-377.
Hu, X., Simin, G., Yang, J., Asif Khan, M., Gaska, R., Shur, M.S.. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate. Electronics letters, vol.36, no.8, 753-754.
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Zeitouny, A., Eizenberg, M., Pearton, S. J., Ren, F.. Contact resistivity and transport mechanisms in W contacts to p- and n-GaN. Journal of applied physics, vol.88, no.4, 2048-2053.
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., Ueda, D.. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation. IEEE transactions on electron devices, vol.54, no.12, 3393-3399.
Khan, M. Asif, Chen, Q., Sun, C. J., Yang, J. W., Blasingame, M., Shur, M. S., Park, H.. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors. Applied physics letters, vol.68, no.4, 514-516.
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