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NTIS 바로가기Journal of materials chemistry. C, Materials for optical and electronic devices, v.8 no.41, 2020년, pp.14431 - 14438
Lee, Moonsang (Research Center for Materials Analysis) , Son, Hyungbin (School of Integrative Engineering) , Lee, Hae-Yong (LumiGNtech Co. Ltd.) , Moon, Joonhee (Research Center for Materials Analysis) , Kim, Heejin (Research Center for Materials Analysis) , Park, Ji-In (Center for Research Equipment) , Liu, Zheng (School of Materials Science & Engineering) , Hahm, Myung Gwan (Department of Materials Science and Engineering) , Yang, Mino (Korea Basic Science Institute Seoul) , Kim, Un Jeong (Imaging Device Laboratory)
While aluminum nitride (AlN) is at the heart of next-generation optoelectronic applications, the growth of highly crystalline AlN remains a challenge. We investigated the formation of nanovoids (NVs) in AlN crystals and the concomitant effect on the structural and optoelectronic characteristics of A...
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