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IEEE transactions on electron devices, v.68 no.12, 2021년, pp.6106 - 6111
Gupta, Mohit Kumar (IMEC, Heverlee, Belgium) , Weckx, Pieter (IMEC, Leuven, Belgium) , Schuddinck, Pieter (IMEC, Leuven, Belgium) , Jang, Doyoung (IMEC, Leuven, Belgium) , Chehab, Bilal (IMEC, Leuven, Belgium) , Cosemans, Stefan (IMEC, Leuven, Belgium) , Ryckaert, Julien (IMEC, Leuven, Belgium) , Dehaene, Wim (IMEC, Heverlee, Belgium)
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This article discusses complementary FET (CFET)-based static random access memory (SRAM) to achieve next-generation bitcell area scaling and performance gain in advanced CMOS technology nodes. SRAM bitcell area reduction, lower SRAM parasitic resistance, and higher drive strength are mandatory to co...
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