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NTIS 바로가기Computer aided design, v.19 no.7, 1987년, pp.380 - 382
Abuelma'atti, M.T.
An empirical formula is presented for the current-voltage characteristics of the metal oxide semiconductor field effect transistor (MOSFET). The three parameters of the formula can be calculated easily from separate regions in the device DC characteristics without recourse to special electrical meas...
IEEE Trans. Electron Devices Wright Vol ED-32 1259 1985 10.1109/T-ED.1985.22109 A simple and continuous MOSFET model
Wright Vol 132 187 1985 Simple and continuous MOSFET models for the computer-aided design of VLSI
Oakley Vol 128 239 1981 CASMOS - an accurate MOS model with geometry-dependent parameters - I
Electronics Letters Brassington Vol 19 447 1983 10.1049/el:19830306 Modification to MOS transistor model CASMOS for increased accuracy of dc simulations of heavily channel-doped n.MOS devices
Kotani Vol 58 1967 1970 Pulse response analysis of a complementary MOSFET inverter by the hyperbolic functional description
Kalinowski Vol 60 1000 1972 A compact MOST model for design analysis
Archiwum Elektrotechniki Poland Kacprzak Vol 31 235 1982 MOS transistor model for NAP2 program implementation part 1-derivation of model
Kacprzak 1980 Proc. of ECCTD A compact model of the enhancement-channel MOS transistor
IEEE J. Solid State Circuits Taki Vol SC-13 724 1978 10.1109/JSSC.1978.1051128 Approximation of junction field-effect transistor characteristics by a hyperbolic function
The systems and devices control Ilin No 7 1968 Approximation of the current-voltage MOS transistors characteristics
Yami 605 1979 22nd Midwest Symp. Circuits and Systems MOSFET static model from simplified measurements
Kohli 1977 An integrable MOS nuristor line: design, theory and extensions
van Eijndhoven 748 1983 International Symposium on Circuits and Systems IEEE The modelling of MOS transistors for a piecewise-linear circuit simulator
Neinhaus 18 1980 Southeastcon Proc. IEEE A low power MOSFET computer model
Vladimirescu 1980 The simulation of MOS integrated circuits
J. Elect. Electron. Eng. Australia Haskard 232 1983 A simple method for determining SPICE transistor model static parameters
Circuits, Systems and Signal Processing Sussman-Fort Vol 3 435 1984 10.1007/BF01599170 On the implementation of general four-terminal DC device models in SPICE
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