다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.25 no.4, 2004년, pp.188 - 190
Karim, K.S. (Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, Canada) , Nathan, A. , Hack, M. , Milne, W.I.
Amorphous silicon (a-Si:H) thin-film transistors (TFTs) used in emerging, nonswitch applications such as analog amplifiers or active loads, often have a bias at the drain terminal in addition to the gate that can alter their threshold voltage (VT) stability performance. At small gate stress voltages (0⩽VST⩽15 V) where the defect state creation instability mechanism is dominant, the presence of a bias at the TFT drain decreases the overall shift in VT(ΔVT) compared to the ΔVT in the absence of a drain bias. The measured shift in VT appears to agree with the defect pool model that the ΔVT is proportional to the number of induced carriers in the a-Si:H channel.
Powell, M. J., Deane, S. C., Milne, W. I.. Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors. Applied physics letters, vol.60, no.2, 207-209.
Powell, M. J., van Berkel, C., Franklin, A. R., Deane, S. C., Milne, W. I.. Defect pool in amorphous-silicon thin-film transistors. Physical review. B, Condensed matter, vol.45, no.8, 4160-4170.
Murthy, R. V. R., Servati, P., Nathan, A., Chamberlain, S. G.. Optimization of n+μc-Si:H contact layer for low leakage current in a-Si:H thin film transistors. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, vol.18, no.2, 685-687.
Introduction to Microelectronic Devices pulfrey 1989
Powell, M. J., van Berkel, C., Hughes, J. R.. Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors. Applied physics letters, vol.54, no.14, 1323-1325.
Libsch, F. R., Kanicki, J.. Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors. Applied physics letters, vol.62, no.11, 1286-1288.
Servati, P., Prakash, S., Nathan, A., Py, Christoph. Amorphous silicon driver circuits for organic light-emitting diode displays. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, vol.20, no.4, 1374-1378.
IEDM Tech Dig amorphous silicon pixel amplifier with $\delta {\rm v}_{\rm t}$ compensation for low noise digital fluoroscopy karim 2002 215
Leroux, T.. Static and dynamic analysis of amorphous-silicon field-effect transistors. Solid-state electronics, vol.29, no.1, 47-58.
Stutzmann, M., Jackson, W. B., Tsai, C. C.. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. Physical review. B, Condensed matter, vol.32, no.1, 23-47.
Powell, M. J., van Berkel, C., French, I. D., Nicholls, D. H.. Bias dependence of instability mechanisms in amorphous silicon thin-film transistors. Applied physics letters, vol.51, no.16, 1242-1244.
Powell, M. J.. Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors. Applied physics letters, vol.43, no.6, 597-599.
Jackson, W. B., Moyer, M. D.. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen. Physical review. B, Condensed matter, vol.36, no.11, 6217-6220.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.