최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Solid-state electronics, v.48 no.9, 2004년, pp.1607 - 1612
(Skip) Egley, J.L (Advanced Product Research and Development Lab, Motorola Inc. MD: EL722, Tempe, AZ 85284, USA) , Vandooren, Anne (850 Rue Jean Monnet, 38926 Crolles Cedex, France) , Winstead, Brian (Front End Technology Simulation, Motorola Inc., MD K10 Austin, TX 78721, USA) , Verret, Eric (Front End Technology Simulation, Motorola Inc., MD K10 Austin, TX 78721, USA) , Workman, Chip (Advanced Product Research and Development Lab, Motorola Inc. MD: K10 Austin, TX 78721, USA) , White, Bruce (Advanced Product Research and Development Lab, Motorola Inc. MD: K10 Austin, TX 78721, USA) , Nguyen, Bich-Yen (Advanced Product Research and Development Lab, Motorola Inc. MD: K10 Austin, TX 78721, USA)
AbstractRaised source/drain (S/D) or raised extension in fully-depleted-SOI (FDSOI) is necessary to boost saturation current, because of increased resistance from the very thin film. We demonstrate that the choice of raising the extension versus the S/D, will depend upon the maximum achievable mobil...
IEEE Electron Dev. Lett. Vandooren 24 5 342 2003 10.1109/LED.2003.812525 Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric and elevated source/drain extensions
10.1109/LED.2003.812525 Vandooren A. A 50 nm TiN gate fully-depleted SOI CMOS technology with HfO2 gate dielectric and elevated source/drain extensions. In: 2003 Silicon Nanoelectronics Workshop, June 8-9, Kyoto, Japan. p. 4-5
Duncan A. Ph.D. Dissertation, University of Illinois, 1996
Winstead B. Ph.D. Dissertation, University of Illinois, 2001
Solid-State Electron. Varahramyan 39 1601 1996 10.1016/0038-1101(96)00091-3
IEEE Trans. Electron. Dev. Darwish 44 1529 1997 10.1109/16.622611
IBM J. Res. Dev. Nowak 46 2/3 2002
IEEE Trans. Electron. Dev. Ancona 47 1449 2000 10.1109/16.848290
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.