다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Solid-state electronics, v.51 no.9, 2007년, pp.1201 - 1210
Rafí, J.M. (Centro Nacional de Microelectró) , Simoen, E. (nica (IMB-CNM-CSIC), Campus UAB, 08193 Bellaterra, Spain) , Mercha, A. (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium) , Collaert, N. (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium) , Hayama, K. (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium) , Campabadal, F. (Kumamoto National College of Technology, 2569-2 Nishigoshi, Kumamoto 861-1102, Japan) , Claeys, C. (Centro Nacional de Microelectró)
AI-Helper
AbstractIn this paper, the appearance of gate induced floating body effects in triple gate SOI nFinFETs with TiN/SiON and TiN/HfO2 gate stacks is investigated. Different floating body effects (FBEs) are found to appear under moderate accumulation back gate bias (VBG) conditions in devices with wide ...
Cristoloveanu 1995 Electrical characterization of silicon-on-insulator materials and devices
Colinge 2004 Silicon-on-insulator technology: materials to VLSI
IEEE Electron Dev Lett Ioannou 11 409 1990 10.1109/55.62972 Characterization of carrier generation in enhancement-mode SOI MOSFET’s
IEEE Trans Nucl Sci Kimpton 39 2126 1992 10.1109/23.211412 Generation lifetime, interface state density, active defect density and oxide resistivity measurements for SOI-MOSFETs and their radiation dependence
Cristoloveanu 385 1994 Proc RADECS 93 Radiation induced lifetime degradation in SIMOX structures
Jpn J Appl Phys Rafí 43 7984 2004 10.1143/JJAP.43.7984 Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
Microel Reliab Rafí 46 1657 2006 10.1016/j.microrel.2006.07.037 Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs
10.1109/ESSDERC.2002.194981 Pretet J, Matsumoto T, Poiroux T, Cristoloveanu S, Gwoziecki R, Raynaud C, et al. New mechanism of body charging in partially depleted SOI-MOSFETs with ultra-thin gate oxides. In: Proceedings of ESSDERC, 2002. p. 515-8.
IEEE Trans Electron Dev Mercha 50 1675 2003 10.1109/TED.2003.814983 “Linear Kink Effect” induced by valence band electron tunneling in ultra-thin gate oxide bulk and SOI MOSFETs
IEEE Trans Electron Dev Lee 48 1366 2001 10.1109/16.930653 Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling
10.1109/SOI.2002.1044434 Poiroux T, Faynot O, Tabone C, Tigelaar H, Mogul H, Bresson N, et al. Emerging floating-body effects in advanced partially-depleted SOI devices. In: Proceedings of IEEE international SOI conference; 2002. p. 99-100.
Physica B Hayama 376-377 416 2006 10.1016/j.physb.2005.12.107 Investigation of back gate interface states by drain current hysteresis in PD-SOIn-MOSFETs
IEEE Electron Dev Lett Dieudonné 23 737 2002 10.1109/LED.2002.805746 Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs
Appl Phys Lett Mercha 82 1790 2003 10.1063/1.1561575 Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Solid State Electron Yang 48 259 2004 10.1016/S0038-1101(03)00272-7 A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits
IEEE Trans Electron Dev Wu 54 316 2007 10.1109/TED.2006.888750 A compact model for valence-band electron tunneling current in partially depleted SOI MOSFETs
IEEE Electron Dev Lett Chen 25 331 2004 10.1109/LED.2004.827284 Using direct-tunneling mechanism to suppress hysteresis effect in floating-body partially depleted SOI devices
J Appl Phys Wilk 89 5243 2001 10.1063/1.1361065 High-k gate dielectrics: current status and materials properties considerations
International Technology Roadmap for Semiconductors, http://public.itrs.net.
IEE Electron Lett Xiong 41 504 2005 10.1049/el:20050281 Full/partial depletion effects in FinFETs
Solid State Electron Lederer 49 1488 2005 10.1016/j.sse.2005.07.011 FinFET analogue characterization from DC to 110GHz
Collaert N, Demand M, Ferain I, Lisoni J, Singanamalla R, Zimmerman P, et al. Tall triple-gate devices with TiN/HfO2 gate stack. In: Symposium on VLSI technology digest of technical papers; 2005. p. 108-9.
Solid State Electron Rafí 48 1211 2004 10.1016/j.sse.2004.01.003 Impact of gate tunneling floating-body charging on drain current transients of 0.10μm-CMOS partially depleted SOI MOSFETs
IEEE Electron Dev Lett Lederer 25 104 2004 10.1109/LED.2003.822658 AC behavior of gate-induced floating body effects in ultrathin oxide PD SOI MOSFETs
Jun B, Fouillat M, Schrimpf RD, Fleetwood DM, Cristoloveanu S. Total dose radiation effects in partially-depleted SOI transistors with ultrathin gate oxide. In: Proceedings of IEEE international SOI conference; 2004. p. 30-1.
IEEE Electron Dev Lett Chen 8 515 1987 10.1109/EDL.1987.26713 Subbreakdown drain leakage current in MOSFET
Shanware A, Shiely JP, Massoud HZ, Vogel E, Henson K, Srivastava A, et al. Extraction of the gate oxide thickness of n- and p-channel MOSFETs below 20Å from the substrate current resulting from valence-band electron tunneling. In: IEDM technical digest; 1999. p. 815-8.
IEEE Trans Electron Dev Shi 45 2355 1998 10.1109/16.726656 Polarity dependent gate tunneling currents in dual-gate CMOSFET’s
IEEE Electron Dev Lett Zhu 23 97 2002 10.1109/55.981318 Current transport in metal/hafnium oxide/silicon structure
Microelectron Eng Shanware 48 295 1999 10.1016/S0167-9317(99)00392-5 Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling
IEEE Electron Dev Lett Hou 24 96 2003 10.1109/LED.2002.807708 Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1−x gate stacks
J Appl Phys Pantisano 98 053712 2005 10.1063/1.2031947 Valence-band electron-tunneling measurement of the gate work function: application to the high-k/polycrystalline-silicon interface
Mater Sci Eng R Houssa 51 37 2006 10.1016/j.mser.2006.04.001 Electrical properties of high-k gate dielectrics: challenges, current issues, and possible solutions
IEEE Trans Electron Dev Hou 51 1783 2004 10.1109/TED.2004.836544 Metal gate work function engineering on gate leakage of MOSFETs
IEEE Electron Dev Lett Pretet 23 55 2002 10.1109/55.974811 Reduced floating body effects in narrow channel SOI MOSFETs
IEE Electron Lett Ionescu 33 1740 1997 10.1049/el:19971169 Junction influence on drain current transients in partially-depleted SOI MOSFETs
Solid State Electron Daugé 48 535 2004 10.1016/j.sse.2003.09.033 Coupling effects and channels separation in FinFETs
Solid State Electron Ritzenthaler 50 558 2006 10.1016/j.sse.2006.03.025 Lateral coupling and immunity to substrate effect in ΩFET devices
IEEE Trans Electron Dev Akarvardar 54 767 2007 10.1109/TED.2007.892364 A two-dimensional model for interface coupling in triple-gate transistors
Solid State Electron Shin 43 349 1999 10.1016/S0038-1101(98)00241-X Measurement of carrier generation lifetime in SOI devices
IEEE Trans Electron Dev Munteanu 49 1198 2002 10.1109/TED.2002.1013276 Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs
IEEE Trans Electron Dev Munteanu 45 1678 1998 10.1109/16.704363 Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations
J Electrochem Soc Martino 153 G502 2006 10.1149/1.2186034 Estimating temperature dependence of generation lifetime extracted from drain current transients
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
저자가 공개 리포지터리에 출판본, post-print, 또는 pre-print를 셀프 아카이빙 하여 자유로운 이용이 가능한 논문
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.