다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Microelectronic engineering, v.86 no.1, 2009년, pp.72 - 77
Musschoot, J. (Department of Solid State Sciences, Ghent University, Krijgslaan 281) , Xie, Q. (State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai 200433, China) , Deduytsche, D. (Department of Solid State Sciences, Ghent University, Krijgslaan 281) , Van den Berghe, S. (Laboratory for High and Medium Activity, SCK CEN, Boeretang 200, B-2400 Mol, Belgium) , Van Meirhaeghe, R.L. (Department of Solid State Sciences, Ghent University, Krijgslaan 281) , Detavernier, C. (Department of Solid State Sciences, Ghent University, Krijgslaan 281)
AI-Helper
AbstractTiN was grown by atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium (TDMAT). Both thermal and plasma enhanced processes were studied, with N2 and NH3 as reactive gases. Using an optimized thermal ammonia based process, a growth rate of 0.06nm/cycle and a resistivity of 53&tim...
Wear Hua 260 1153 2006 10.1016/j.wear.2005.07.014
J. Appl. Phys. Park 80 5674 1996 10.1063/1.363620
Appl. Phys. Lett. Min 75 1521 1999 10.1063/1.124742
Thin Solid Films Elam 436 145 2003 10.1016/S0040-6090(03)00533-9
J. Vac. Sci. Technol. A Kim 22 8 2004 10.1116/1.1624285
Solid State Electron. Gerritsen 49 1767 2005 10.1016/j.sse.2005.10.024
Microelec. Eng. Fillot 82 248 2005 10.1016/j.mee.2005.07.083
J. Appl. Phys. Puurunen 97 121301 2005 10.1063/1.1940727
J. Electrochem. Soc. Heil 153 G956 2006 10.1149/1.2344843
J. Vac. Sci. Technol. B Rossnagel 18 2016 2000 10.1116/1.1305809
J. Vac. Sci. Technol. A Detavernier 18 470 2000 10.1116/1.582211
J. Appl. Phys. Xie 102 083521 2007 10.1063/1.2798384
J. Vac. Sci. Technol. B Rossnagel 22 240 2004 10.1116/1.1642639
Appl. Surf. Sci. Osiceanu 253 381 2006 10.1016/j.apsusc.2006.06.018
J. Appl. Phys. Kim 98 014308 2005 10.1063/1.1935761
Thin Solid Films Knaepen 516 4946 2008 10.1016/j.tsf.2007.09.037
J. Appl. Phys. Chang 67 566 1990 10.1063/1.345194
J. Electrochem. Soc. Kim 152 G29 2005 10.1149/1.1825913
J. Appl. Phys. Lim 87 4632 2000 10.1063/1.373116
J. Electrochem. Soc. Driessen 148 G178 2001 10.1149/1.1350687
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.