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Microelectronic engineering, v.87 no.5/8, 2010년, pp.1198 - 1203
Heck, John (Intel Corporation, MS SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States) , Adams, Donald (Nanochip, Inc, United States) , Belov, Nickolai (Nanochip, Inc, United States) , Chou, Tsung-Kuan A. (Intel Corporation, MS SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States) , Kim, Byong (Nanochip, Inc, United States) , Kornelsen, Kevin (Micralyne Inc., 1911 94 St. NW, Edmonton, AB T6N, Canada) , Ma, Qing (Intel Corporation, MS SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States) , Rao, Valluri (Intel Corporation, MS SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States) , Severi, Simone (IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium) , Spicer, Dean (Micralyne Inc., 1911 94 St. NW, Edmonton, AB T6N, Canada) , Tchelepi, Ghassan (Nanochip, Inc, United States) , Witvrouw, Ann (IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium)
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AbstractWe have demonstrated a MEMS memory device utilizing an array of cantilevered AFM probe tips fabricated directly on standard CMOS, and integrated with a ferroelectric media on a movable platform by wafer bonding. The MEMS process uses low-temperature poly-SiGe to fabricate cantilevers with su...
D. Adams, N. Belov, T.-K. Chou, J. Heck, B. Kim, G. Knight, Q. Ma, V. Rao, G. Tchelepi, Nanochip - ultra-high data density MEMS memory device.
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