참고문헌 (30)

1. Suh, You-Seok, Lazar, Heather, Chen, Bei, Lee, Jae-Hoon, Misra, Veena. Electrical Characteristics of HfO[sub 2] Dielectrics with Ru Metal Gate Electrodes. Journal of the Electrochemical Society : JES, vol.152, no.9, F138-.

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2. Kim, Seong Keun, Kim, Wan-Don, Kim, Kyung-Min, Hwang, Cheol Seong, Jeong, Jaehack. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition. Applied physics letters, vol.85, no.18, 4112-4114.

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3. Han, Jeong Hwan, Lee, Sang Woon, Choi, Gyu-Jin, Lee, Sang Young, Hwang, Cheol Seong, Dussarrat, Christian, Gatineau, Julien. Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO₄ Precursor. Chemistry of materials : a publication of the American Chemical Society, vol.21, no.2, 207-209.

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4. Josell, D., Wheeler, D., Witt, C., Moffat, T. P.. Seedless Superfill: Copper Electrodeposition in Trenches with Ruthenium Barriers. Electrochemical and solid-state letters, vol.6, no.10, C143-.

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5. Lane, M. W., Murray, C. E., McFeely, F. R., Vereecken, P. M., Rosenberg, R.. Liner materials for direct electrodeposition of Cu. Applied physics letters, vol.83, no.12, 2330-2332.

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6. Farmer, Damon B., Gordon, Roy G.. High density Ru nanocrystal deposition for nonvolatile memory applications. Journal of applied physics, vol.101, no.12, 124503-.

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7. Lee, Do-Joong, Yim, Sung-Soo, Kim, Ki-Su, Kim, Soo-Hyun, Kim, Ki-Bum. Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO2/Al2O3 bilayered tunnel barrier. Journal of applied physics, vol.107, no.1, 013707-.

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8. Kim, Woo-Hee, Park, Sang-Joon, Son, Jong-Yeog, Kim, Hyungjun. Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition. Nanotechnology, vol.19, no.4, 045302-.

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9. Lee, Do-Joong, Yim, Sung-Soo, Kim, Ki-Su, Kim, Soo-Hyun, Kim, Ki-Bum. Formation of Ru Nanotubes by Atomic Layer Deposition onto an Anodized Aluminum Oxide Template. Electrochemical and solid-state letters, vol.11, no.6, K61-.

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10. Biener, Juergen, Baumann, Theodore F, Wang, Yinmin, Nelson, Erik J, Kucheyev, Sergei O, Hamza, Alex V, Kemell, Marianna, Ritala, Mikko, Leskelä, Markku. Ruthenium/aerogel nanocomposites via atomic layer deposition. Nanotechnology, vol.18, no.5, 055303-.

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11. Kim, H., Lee, H.B.R., Maeng, W.J.. Applications of atomic layer deposition to nanofabrication and emerging nanodevices. Thin solid films, vol.517, no.8, 2563-2580.

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12. George, Steven M.. Atomic Layer Deposition: An Overview. Chemical reviews, vol.110, no.1, 111-131.

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13. 10.1002/cvde.v9:1 

    

14. Aaltonen, Titta, Rahtu, Antti, Ritala, Mikko, Leskelä, Markku. Reaction Mechanism Studies on Atomic Layer Deposition of Ruthenium and Platinum. Electrochemical and solid-state letters, vol.6, no.9, C130-.

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15. Park, K. J., Terry, D. B., Stewart, S. M., Parsons, G. N.. In Situ Auger Electron Spectroscopy Study of Atomic Layer Deposition: Growth Initiation and Interface Formation Reactions during Ruthenium ALD on Si−H, SiO₂, and HfO₂ Surfaces. Langmuir : the ACS journal of surfaces and colloids, vol.23, no.11, 6106-6112.

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16. Park, S.J., Kim, W.H., Lee, H.B.R., Maeng, W.J., Kim, H.. Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode. Microelectronic engineering, vol.85, no.1, 39-44.

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17. Kwon, Oh-Kyum, Kim, Jae-Hoon, Park, Hyoung-Sang, Kang, Sang-Won. Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer. Journal of the Electrochemical Society : JES, vol.151, no.2, G109-.

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18. Yim, Sung-Soo, Lee, Do-Joong, Kim, Ki-Su, Kim, Soo-Hyun, Yoon, Tae-Sik, Kim, Ki-Bum. Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition. Journal of applied physics, vol.103, no.11, 113509-.

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19. 10.1002/cvde.v10:4 

    

20. J.-H. Kim, Y.-D. Kim, D.-S. Kil, S.-J. Yeom, J.-S. Roh, N.-J. Kwak, J.-W. Kim, S.-K. Park , in Proceedings of the 8th international conference on atomic layer deposition , Bruges, Belgium, June 30, 2008. 

21. Kwon, Oh-Kyum, Kwon, Se-Hun, Park, Hyoung-Sang, Kang, Sang-Won. PEALD of a Ruthenium Adhesion Layer for Copper Interconnects. Journal of the Electrochemical Society : JES, vol.151, no.12, C753-.

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22. Yim, Sung-Soo, Lee, Do-Joong, Kim, Ki-Su, Lee, Moon-Sang, Kim, Soo-Hyun, Kim, Ki-Bum. Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application. Electrochemical and solid-state letters, vol.11, no.9, K89-.

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23. Kim, Seong Keun, Han, Jeong Hwan, Kim, Gun Hwan, Hwang, Cheol Seong. Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition. Chemistry of materials : a publication of the American Chemical Society, vol.22, no.9, 2850-2856.

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24. Li, Huazhi, Farmer, Damon B., Gordon, Roy G., Lin, Youbo, Vlassak, Joost. Vapor Deposition of Ruthenium from an Amidinate Precursor. Journal of the Electrochemical Society : JES, vol.154, no.12, D642-.

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25. Eom, Tae-Kwang, Sari, Windu, Choi, Kyu-Jeong, Shin, Woong-Chul, Kim, Jae Hyun, Lee, Do-Joong, Kim, Ki-Bum, Sohn, Hyunchul, Kim, Soo-Hyun. Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O[sub 2]. Electrochemical and solid-state letters, vol.12, no.11, D85-.

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26. Kim, Sunjung, Duquette, David J.. Morphology Control of Copper Growth on TiN and TaN Diffusion Barriers in Seedless Copper Electrodeposition. Journal of the Electrochemical Society : JES, vol.154, no.4, D195-.

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27. Maex, K., Baklanov, M. R., Shamiryan, D., lacopi, F., Brongersma, S. H., Yanovitskaya, Z. S.. Low dielectric constant materials for microelectronics. Journal of applied physics, vol.93, no.11, 8793-8841.

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28. Rhee, Seung-Hyun, Murray, Conal E., Besser, Paul R.. Effects of BEOL Stack on Thermal Mechanical Stress of Cu Lines. Materials Research Society symposia proceedings, vol.914, 0914-F08-01-.

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29. Park, Ki-Chul, Kim, Ki-Bum, Raaijmakers, Ivo J. M. M., Ngan, Ken. The effect of density and microstructure on the performance of TiN barrier films in Cu metallization. Journal of applied physics, vol.80, no.10, 5674-5681.

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30. Wang, Xianbao, You, Haijun, Liu, Fangming, Li, Mingjian, Wan, Li, Li, Shaoqing, Li, Qin, Xu, Yang, Tian, Rong, Yu, Ziyong, Xiang, Dong, Cheng, Jing. Large-Scale Synthesis of Few-Layered Graphene using CVD. Chemical vapor deposition : CVD, vol.15, no.1, 53-56.

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