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Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

ACS applied materials & interfaces, v.8 no.39, 2016년, pp.26119 - 26125  

Wen, Liang Gong (imec, Kapeldreef 75, 3001 Leuven,) ,  Roussel, Philippe (imec, Kapeldreef 75, 3001 Leuven,) ,  Pedreira, Olalla Varela (imec, Kapeldreef 75, 3001 Leuven,) ,  Briggs, Basoene (imec, Kapeldreef 75, 3001 Leuven,) ,  Groven, Benjamin (imec, Kapeldreef 75, 3001 Leuven,) ,  Dutta, Shibesh (imec, Kapeldreef 75, 3001 Leuven,) ,  Popovici, Mihaela I. (imec, Kapeldreef 75, 3001 Leuven,) ,  Heylen, Nancy (imec, Kapeldreef 75, 3001 Leuven,) ,  Ciofi, Ivan (imec, Kapeldreef 75, 3001 Leuven,) ,  Vanstreels, Kris (imec, Kapeldreef 75, 3001 Leuven,) ,  sterberg, Frederik W. (Department of Micro- and Nanotechnology, Technical University of Denmark, rsteds Plads, 2800 Kgs. Lyngby,) ,  Hansen, Ole (Department of Micro- and Nanotechnology, Technical University of Denmark, rsteds Plads, 2800 Kgs. Lyngby,) ,  Petersen, Dirch H. (Department of Micro- and Nanotechnology, Technical University of Denmark, rsteds Plads, 2800 Kgs. Lyngby,) ,  Opsomer, Karl (imec, Kapeldreef 75, 3001 Leuven,) ,  Detavernie, Christophe (Department of Solid-State Sciences, Ghent University, Krijgslaan 281, 9000 Gent,) ,  Wilson, Christopher J. (imec, Kapeldreef 75, 3001 Leuven,) ,  Elshocht, Sven Van (imec, Kapeldreef 75, 3001 Leuven,) ,  Croes, Kristof (imec, Kapeldreef 75, 3001 Leuven,) ,  Bommels, Jurgen (imec, Kapeldreef 75, 3001 Leuven,) ,  Tokei, Zsolt (imec, Kapeldreef 75, 3001 Leuven,) ,  Adelmann, Christoph (imec, Kapeldreef)

Abstract AI-Helper 아이콘AI-Helper

Atomic layer deposition of ruthenium is studied as a barrierless metallization solution for future sub-10 nm interconnect technology nodes. We demonstrate the void-free filling in sub-10 nm wide single damascene lines using an ALD process in combination with 2.5 of ALD TiN interface and postdeposit...

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참고문헌 (36)

  1. 2013 International Technology Roadmap for Semiconductors (ITRS) Wilson L. 2013 

  2. Davis, J.A., Meindl, J.D., Venkatesan, R., Kaloyeros, A., Beylansky, M., Souri, S.J., Banerjee, K., Saraswat, K.C., Rahman, A., Reif, R.. Interconnect limits on gigascale integration (GSI) in the 21st century. Proceedings of the IEEE, vol.89, no.3, 305-324.

  3. Markov, Igor L.. Limits on fundamental limits to computation. Nature, vol.512, no.7513, 147-154.

  4. Edelstein, D.; Heidenreich, J.; Goldblatt, R.; Cote, W.; Uzoh, C.; Lustig, N.; Roper, P.; McDevitt, T.; Motsiff, W.; Simon, A.; Dukovic, J.Full Copper Wiring in a Sub-0.25/spl mu/m CMOS ULSI Technology. InInternational Electron Devices Meeting, Proceedings of the International Electron Devices Meeting 1997, Washington, DC, December 7-10, 1997; IEEE Industry Applications Society:Piscataway, NJ, 1997; pp773-776. 

  5. Copper Interconnect Technology Gupta T. 223 2009 10.1007/978-1-4419-0076-0_5 

  6. Electrochemical Nanotechnologies Osaka T. 2009 

  7. Advanced Interconnects for ULSI Technology Baklanov M. 2012 10.1002/9781119963677 

  8. Steinhögl, Werner, Schindler, Günther, Steinlesberger, Gernot, Engelhardt, Manfred. Size-dependent resistivity of metallic wires in the mesoscopic range. Physical review. B, Condensed matter and materials physics, vol.66, no.7, 075414-.

  9. Rossnagel, S. M.. Characteristics of ultrathin Ta and TaN films. Journal of vacuum science & technology. processing, measurement, and phenomena : an official journal of the American Vacuum Society. B, Microelectronics and nanometer structures, vol.20, no.6, 2328-.

  10. Zhang, W., Brongersma, S. H., Li, Z., Li, D., Richard, O., Maex, K.. Analysis of the size effect in electroplated fine copper wires and a realistic assessment to model copper resistivity. Journal of applied physics, vol.101, no.6, 063703-.

  11. Josell, Daniel, Brongersma, Sywert H., T?kei, Zsolt. Size-Dependent Resistivity in Nanoscale Interconnects. Annual review of materials research, vol.39, 231-254.

  12. Sun, Tik, Yao, Bo, Warren, Andrew P., Barmak, Katayun, Toney, Michael F., Peale, Robert E., Coffey, Kevin R.. Surface and grain-boundary scattering in nanometric Cu films. Physical review. B, Condensed matter and materials physics, vol.81, no.15, 155454-.

  13. Chawla, J. S., Gall, D.. Specular electron scattering at single-crystal Cu(001) surfaces. Applied physics letters, vol.94, no.25, 252101-.

  14. Nordell, Bradley J., Karki, Sudarshan, Nguyen, Thuong D., Rulis, Paul, Caruso, A. N., Purohit, Sudhaunshu S., Li, Han, King, Sean W., Dutta, Dhanadeep, Gidley, David, Lanford, William A., Paquette, Michelle M.. The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide. Journal of applied physics, vol.118, no.3, 035703-.

  15. Wu, Yue, Xiang, Jie, Yang, Chen, Lu, Wei, Lieber, Charles M.. Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures. Nature, vol.430, no.6995, 61-65.

  16. Kim, J., Anderson, W. A.. Direct Electrical Measurement of the Self-Assembled Nickel Silicide Nanowire. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.6, no.7, 1356-1359.

  17. Li, Bin, Luo, Zhiquan, Shi, Li, Zhou, JiPing, Rabenberg, Lew, Ho, Paul S, Allen, Richard A, Cresswell, Michael W. Controlled formation and resistivity scaling of nickel silicide nanolines. Nanotechnology, vol.20, no.8, 085304-.

  18. Graham, Andrew P., Duesberg, Georg S., Seidel, Robert V., Liebau, Maik, Unger, Eugen, Pamler, Werner, Kreupl, Franz, Hoenlein, Wolfgang. Carbon Nanotubes for Microelectronics?. Small, vol.1, no.4, 382-390.

  19. De Volder, Michael F. L., Tawfick, Sameh H., Baughman, Ray H., Hart, A. John. Carbon Nanotubes: Present and Future Commercial Applications. Science, vol.339, no.6119, 535-539.

  20. Berger, Claire, Song, Zhimin, Li, Xuebin, Wu, Xiaosong, Brown, Nate, Naud, Cécile, Mayou, Didier, Li, Tianbo, Hass, Joanna, Marchenkov, Alexei N., Conrad, Edward H., First, Phillip N., de Heer, Walt A.. Electronic Confinement and Coherence in Patterned Epitaxial Graphene. Science, vol.312, no.5777, 1191-1196.

  21. Murali, R., Brenner, K., Yinxiao Yang, Beck, T., Meindl, J.D.. Resistivity of Graphene Nanoribbon Interconnects. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.30, no.6, 611-613.

  22. Murali, Raghunath, Yang, Yinxiao, Brenner, Kevin, Beck, Thomas, Meindl, James D.. Breakdown current density of graphene nanoribbons. Applied physics letters, vol.94, no.24, 243114-.

  23. 10.1109/IITC.2014.6831867 Kondo, D.; Nakano, H.; Zhou, B.; Akiko, I.; Hayashi, K.; Takahashi, M.; Sato, S.; Yokoyama, N.Sub-10-nm-wide Intercalated Multi-layer Graphene Interconnects with Low Resistivity,Proceedings of the 2014 IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), San Jose, CA, May 20-23, 2014; IEEE International:New York, 2014; pp189-192. 

  24. Microelectron. Eng. Popovici M. 108 147 2014 10.1016/j.mee.2015.04.076 

  25. Harper, J. M. E.. Microstructure control in semiconductor metallization. Journal of vacuum science & technology. processing, measurement, and phenomena : an official journal of the American Vacuum Society. B, Microelectronics and nanometer structures, vol.15, no.4, 763-.

  26. Harper, J. M. E., Cabral Jr., C., Andricacos, P. C., Gignac, L., Noyan, I. C., Rodbell, K. P., Hu, C. K.. Mechanisms for microstructure evolution in electroplated copper thin films near room temperature. Journal of applied physics, vol.86, no.5, 2516-2525.

  27. Barmak, K., Gungor, A., Cabral Jr., C., Harper, J. M. E.. Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity. Journal of applied physics, vol.94, no.3, 1605-1616.

  28. Mayadas, A. F., Shatzkes, M.. Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces. Physical review B, Solid state, vol.1, no.4, 1382-1389.

  29. Fuchs, K.. The conductivity of thin metallic films according to the electron theory of metals. Proceedings of the Cambridge Philosophical Society. Mathematical and physical sciences, vol.34, no.1, 100-108.

  30. Sondheimer, E. H.. The mean free path of electrons in metals. Advances in physics, vol.50, no.6, 499-537.

  31. Kapur, P., McVittie, J.P., Saraswat, K.C.. Technology and reliability constrained future copper interconnects. I. Resistance modeling. IEEE transactions on electron devices, vol.49, no.4, 590-597.

  32. Chenyun Pan, Naeemi, Azad. A Proposal for a Novel Hybrid Interconnect Technology for the End of Roadmap. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.35, no.2, 250-252.

  33. Schuster, Constance E., Vangel, Mark G., Schafft, Harry A.. Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions. Microelectronics reliability, vol.41, no.2, 239-252.

  34. Platinum Metals Review Powell R. W. 138 6 4 1962 10.1595/003214062X64138143 

  35. Roussel, P.; Ciofi, I.; Degraeve, R.; Gonzalez, V. V.; Jourdan, N.; Baert, R.; Linten, D.; Bömmels, J.; Groeseneken, G.; Thean, A.Semi-Empirical Interconnect Resistance Model for Advanced Technology Nodes,Proceedings of the IEEE International Reliability Physics Symposium, Pasadena, CA, April 17-21, 2016. 

  36. Zhao, Larry, Pantouvaki, Marianna, Croes, Kristof, Tőkei, Zsolt, Barbarin, Yohan, Wilson, Christopher J., Baklanov, Mikhail R., Beyer, Gerald P., Claeys, Cor. Role of copper in time dependent dielectric breakdown of porous organo-silicate glass low-k materials. Applied physics letters, vol.99, no.22, 222110-.

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