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NTIS 바로가기IEEE transactions on nanotechnology, v.8 no.5, 2009년, pp.654 - 658
Younghwan Son (Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea) , Chang-Ki Baek (Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea) , In-Shik Han (Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea) , Han-Soo Joo (Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea) , Tae-Gyu Goo (Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea) , Ooksang Yoo (Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea) , Wonho Choi (Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea) , Hee-Hwan Ji (Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea) , Hi-Deok Lee , Kim, D.M.
This paper presents the depth profile of oxide trap density, extracted from the dual gate processed thermally grown oxide in NO ambient and remote plasma nitrided oxides by using multifrequency and multitemperature charge pumping technique in conjunction with the tunneling model of trapped charges. ...
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Chen, C.H., Fang, Y.K., Yang, C.W., Ting, S.F., Tsair, Y.S., Wang, M.F., Lin, Y.M., Yu, M.C., Chen, S.C., Yu, C.H., Liang, M.S.. High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.22, no.6, 260-262.
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