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NTIS 바로가기IEEE transactions on nanotechnology, v.8 no.5, 2009년, pp.643 - 649
Se Han Lee (Dept. of Comput. & Electron. Eng., Korea Univ., Seoul, South Korea) , Yun Seop Yu (Dept. of Comput. & Electron. Eng., Korea Univ., Seoul, South Korea) , Sung Woo Hwang , Doyeol Ahn
Extraction of carrier mobilities of silicon nanowire FETs (SNWFETs) with Schottky source and drain contacts is performed using a newly developed compact model, which is suitable for efficient circuit simulation. The SNWFET model is based on an equivalent circuit including a Schottky diode model for ...
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