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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.31 no.3, 2010년, pp.192 - 194
Ki-Sik Im (Sch. of Electr. Eng.&Comput. Sci., Kyoungpook Nat. Univ., Daegu, South Korea) , Jong-Bong Ha (Sch. of Electr. Eng.&Comput. Sci., Kyoungpook Nat. Univ., Daegu, South Korea) , Ki-Won Kim (Sch. of Electr. Eng.&Comput. Sci., Kyoungpook Nat. Univ., Daegu, South Korea) , Jong-Sub Lee (Sch. of Electr. Eng.&Comput. Sci., Kyoungpook Nat. Univ., Daegu, South Korea) , Dong-Seok Kim (Sch. of Electr. Eng.&Comput. Sci., Kyoungpook Nat. Univ., Daegu, South Korea) , Sung-Ho Hahm (Sch. of Electr. Eng.&Comput. Sci., Kyoungpook Nat. Univ., Daegu, South Korea) , Jung-Hee Lee (Sch. of Electr. Eng.&Comput. Sci., Kyoungpook Nat. Univ., Daegu, South Korea)
A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density (> 1014 / cm2) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET wi...
Sugiura, S., Kishimoto, S., Mizutani, T., Kuroda, M., Ueda, T., Tanaka, T.. Normally-off AlGaN/GaN MOSHFETs with HfO2 gate oxide. Physica status solidi. PSS. C, Current topics in solid state physics, vol.5, no.6, 1923-1925.
Irokawa, Y., Nakano, Y., Ishiko, M., Kachi, T., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I.. MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors. Applied physics letters, vol.84, no.15, 2919-2921.
Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., Hilsenbeck, J.. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. Journal of applied physics, vol.85, no.6, 3222-3233.
Ibbetson, J. P., Fini, P. T., Ness, K. D., DenBaars, S. P., Speck, J. S., Mishra, U. K.. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Applied physics letters, vol.77, no.2, 250-252.
Cai, Yong, Zhou, Yugang, Chen, K.J., Lau, K.M.. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.26, no.7, 435-437.
Lee, Hwa-Chul, Hyun, Sun-Young, Cho, Hyun-Ick, Ostermaier, Clemens, Kim, Ki-Won, Ahn, Sang-Il, Na, Kyoung-Il, Ha, Jong-Bong, Kwon, Dae-Hyuk, Hahn, Cheol-Koo, Hahm, Sung-Ho, Choi, Hyun-Chul, Lee, Jung-Hee. Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer. Japanese journal of applied physics, vol.47, no.4, 2824-.
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., Ueda, D.. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation. IEEE transactions on electron devices, vol.54, no.12, 3393-3399.
Maroldt, Stephan, Haupt, Christian, Pletschen, Wilfried, Müller, Stefan, Quay, Rüdiger, Ambacher, Oliver, Schippel, Christian, Schwierz, Frank. Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation. Japanese journal of applied physics, vol.48, no.4, 04C083-.
Kambayashi, H., Niiyama, Y., Ootomo, S., Nomura, T., Iwami, M., Satoh, Y., Kato, S., Yoshida, S.. Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.28, no.12, 1077-1079.
Oka, Tohru, Nozawa, Tomohiro. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.29, no.7, 668-670.
Aktas, Ozgur, Fan, Z. F., Mohammad, S. N., Botchkarev, A. E., Morkoç, H.. High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors. Applied physics letters, vol.69, no.25, 3872-3874.
Chow, T.P., Tyagi, R.. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices. IEEE transactions on electron devices, vol.41, no.8, 1481-1483.
Huang, W., Khan, T., Chow, T.P.. Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.27, no.10, 796-798.
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