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NTIS 바로가기Japanese journal of applied physics, v.51 no.3R, 2012년, pp.034101 -
Kim, Dong-Seok , Im, Ki-Sik , Kang, Hee-Sung , Kim, Ki-Won , Bae, Sung-Bum , Mun, Jae-Kyoung , Nam, Eun-Soo , Lee, Jung-Hee
The recessed-gate AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with a p-GaN back-barrier studied in this work exhibited much lower buffer leakage current than those without the back-barrier. The threshold voltage of the device with the p-GaN back-barrier w...
2000 622 T1 MRS Proc. T. P. Chow
2004 N. Ikeda
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Niiyama, Yuki, Kambayashi, Hiroshi, Ootomo, Shinya, Nomura, Takehiko, Yoshida, Seikoh, Chow, Tat-sing Paul. Over 2 A Operation at 250 °C of GaN Metal-Oxide-Semiconductor Field Effect Transistors on Sapphire Substrates. Japanese journal of applied physics, vol.47, no.r9, 7128-.
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Oka, Tohru, Nozawa, Tomohiro. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.29, no.7, 668-670.
Kanamura, M., Ohki, T., Kikkawa, T., Imanishi, K., Imada, T., Yamada, A., Hara, N..
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-
Ki-Sik Im, Jong-Bong Ha, Ki-Won Kim, Jong-Sub Lee, Dong-Seok Kim, Sung-Ho Hahm, Jung-Hee Lee. Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.3, 192-194.
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Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Masayuki, Iwami, Yoshida, Seikoh. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE. Journal of crystal growth, vol.298, 831-834.
Palacios, T., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S.P., Mishra, U.K.. AlGaN/GaN high electron mobility transistors with InGaN back-barriers. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.27, no.1, 13-15.
Medjdoub, F., Derluyn, J., Cheng, K., Leys, M., Degroote, S., Marcon, D., Visalli, D., Van Hove, M., Germain, M., Borghs, G.. Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.2, 111-113.
Lee, Hwa-Chul, Hyun, Sun-Young, Cho, Hyun-Ick, Ostermaier, Clemens, Kim, Ki-Won, Ahn, Sang-Il, Na, Kyoung-Il, Ha, Jong-Bong, Kwon, Dae-Hyuk, Hahn, Cheol-Koo, Hahm, Sung-Ho, Choi, Hyun-Chul, Lee, Jung-Hee. Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer. Japanese journal of applied physics, vol.47, no.4, 2824-.
Kim, Dong-Seok, Kim, Sung-Nam, Kim, Ki-Won, Im, Ki-Sik, Kang, Hee-Sung, Kwak, Eun-Hwan, Lee, Jung-Hee, Lee, Seong-Gil, Ha, Jong-Bong. High Performance in a Normally-off Al2O3/GaN MOSFET Based on an AlGaN/GaN Heterostructure with a p-GaN Buffer Layer. Journal of the Korean Physical Society, vol.58, no.5, 1500-1504.
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Ki-Won Kim, Sung-Dal Jung, Dong-Seok Kim, Hee-Sung Kang, Ki-Sik Im, Jae-Joon Oh, Jong-Bong Ha, Jai-Kwang Shin, Jung-Hee Lee.
Effects of TMAH Treatment on Device Performance of Normally Off
Kambayashi, H., Satoh, Y., Ootomo, S., Kokawa, T., Nomura, T., Kato, S., Chow, T.s.P.. Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage. Solid-state electronics, vol.54, no.6, 660-664.
2008 W. Huang
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