[논문]Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

Yang, Heejun; Heo, Jinseong; Park, Seongjun; Song, Hyun Jae; Seo, David H.; Byun, Kyung-Eun; Kim, Philip; Yoo, InKyeong; Chung, Hyun-Jong; Kim, Kinam

doi:10.1126/science.1220527

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier 원문보기

Science, v.336 no.6085 = no.6085, 2012년, pp.1140 - 1143

Yang, Heejun (Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.) , Heo, Jinseong (Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.) , Park, Seongjun (Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.) , Song, Hyun Jae (Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.) , Seo, David H. (Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.) , Byun, Kyung-Eun (Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.) , Kim, Philip (Department of Physics, Columbia University, New York, NY 10027, USA.) , Yoo, InKyeong (Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.) , Chung, Hyun-Jong (Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.) , Kim, Kinam (Samsung Advanced Institute of Technology, Yongin 446-712, Korea.)

Abstract ▼ AI-Helper

Updating the Triode with Graphene In early electronics, the triode-a vacuum device that combined a diode and an electrical grid-was used to control and amplify signals, but was replaced in most applications by solid-state silicon electronics. One characteristic of silicon-metal interfaces is that the Schottky barrier created-which acts as a diode-does not change with the work function of the metal-the Fermi level is pinned by the presence of surface states. Yang et al. (p. 1140 , published online 17 May) now show that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters. The absence of defects and surface oxides at a graphene/silicon interface enables voltage control of graphene devices. Despite several years of research into graphene electronics, sufficient on/off current ratio Ion / Ioff in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier “barristor” (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 10 5 ) is achieved by adjusting the gate voltage to control the graphene-silicon Schottky barrier. The absence of Fermi-level pinning at the interface allows the barrier’s height to be tuned to 0.2 electron volt by adjusting graphene’s work function, which results in large shifts of diode threshold voltages. Fabricating GBs on respective 150-mm wafers and combining complementary p- and n-type GBs, we demonstrate inverter and half-adder logic circuits.

참고문헌 (29)

Bardeen, J., Brattain, W. H.. The Transistor, A Semi-Conductor Triode. Physical review, vol.74, no.2, 230-231.

상세보기
Lundstrom, Mark. Moore's Law Forever?. Science, vol.299, no.5604, 210-211.

상세보기
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., Firsov, A. A.. Two-dimensional gas of massless Dirac fermions in graphene. Nature, vol.438, no.7065, 197-200.

상세보기
Geim, A. K., Novoselov, K. S.. The rise of graphene. Nature materials, vol.6, no.3, 183-191.

상세보기
Zhang, Yuanbo, Tan, Yan-Wen, Stormer, Horst L., Kim, Philip. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature, vol.438, no.7065, 201-204.

상세보기
Li, Xinming, Zhu, Hongwei, Wang, Kunlin, Cao, Anyuan, Wei, Jinquan, Li, Chunyan, Jia, Yi, Li, Zhen, Li, Xiao, Wu, Dehai. Graphene‐On‐Silicon Schottky Junction Solar Cells. Advanced materials, vol.22, no.25, 2743-2748.

상세보기
Tongay, S., Schumann, T., Hebard, A. F.. Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates. Applied physics letters, vol.95, no.22, 222103-.

상세보기
Seyller, Th., Emtsev, K. V., Speck, F., Gao, K.-Y., Ley, L.. Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation. Applied physics letters, vol.88, no.24, 242103-.

상세보기
Chen, Chun-Chung, Aykol, Mehmet, Chang, Chia-Chi, Levi, A. F. J., Cronin, Stephen B.. Graphene-Silicon Schottky Diodes. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.11, no.5, 1863-1867.

상세보기
Tongay, S., Schumann, T., Miao, X., Appleton, B.R., Hebard, A.F.. Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping. Carbon, vol.49, no.6, 2033-2038.

상세보기
Bell, L. D., Kaiser, W. J., Hecht, M. H., Grunthaner, F. J.. Direct control and characterization of a Schottky barrier by scanning tunneling microscopy. Applied physics letters, vol.52, no.4, 278-280.

상세보기
Xu, Y., He, K. T., Schmucker, S. W., Guo, Z., Koepke, J. C., Wood, J. D., Lyding, J. W., Aluru, N. R.. Inducing Electronic Changes in Graphene through Silicon (100) Substrate Modification. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.11, no.7, 2735-2742.

상세보기
Xia, Fengnian, Perebeinos, Vasili, Lin, Yu-ming, Wu, Yanqing, Avouris, Phaedon. The origins and limits of metal-graphene junction resistance. Nature nanotechnology, vol.6, no.3, 179-184.

상세보기
Yu, Young-Jun, Zhao, Yue, Ryu, Sunmin, Brus, Louis E., Kim, Kwang S., Kim, Philip. Tuning the Graphene Work Function by Electric Field Effect. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.9, no.10, 3430-3434.

상세보기
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., Peres, N. M. R., Leist, J., Geim, A. K., Novoselov, K. S., Ponomarenko, L. A.. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures. Science, vol.335, no.6071, 947-950.

상세보기
Reina, Alfonso, Jia, Xiaoting, Ho, John, Nezich, Daniel, Son, Hyungbin, Bulovic, Vladimir, Dresselhaus, Mildred S., Kong, Jing. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.9, no.1, 30-35.

상세보기
Kim, Keun Soo, Zhao, Yue, Jang, Houk, Lee, Sang Yoon, Kim, Jong Min, Kim, Kwang S., Ahn, Jong-Hyun, Kim, Philip, Choi, Jae-Young, Hong, Byung Hee. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature, vol.457, no.7230, 706-710.

상세보기
Li, Xuesong, Cai, Weiwei, An, Jinho, Kim, Seyoung, Nah, Junghyo, Yang, Dongxing, Piner, Richard, Velamakanni, Aruna, Jung, Inhwa, Tutuc, Emanuel, Banerjee, Sanjay K., Colombo, Luigi, Ruoff, Rodney S.. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science, vol.324, no.5932, 1312-1314.

상세보기
Bae, Sukang, Kim, Hyeongkeun, Lee, Youngbin, Xu, Xiangfan, Park, Jae-Sung, Zheng, Yi, Balakrishnan, Jayakumar, Lei, Tian, Ri Kim, Hye, Song, Young Il, Kim, Young-Jin, Kim, Kwang S., Özyilmaz, Barbaros, Ahn, Jong-Hyun, Hong, Byung Hee, Iijima, Sumio. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nature nanotechnology, vol.5, no.8, 574-578.

상세보기
Jeon, Insu, Yang, Heejun, Lee, Sung-Hoon, Heo, Jinseong, Seo, David H., Shin, Jaikwang, Chung, U-In, Kim, Zheong Gou, Chung, Hyun-Jong, Seo, Sunae. Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition. ACS nano, vol.5, no.3, 1915-1920.

상세보기
Liu, Chang-Hua, Wu, Chung-Chiang, Zhong, Zhaohui. A Fully Tunable Single-Walled Carbon Nanotube Diode. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.11, no.4, 1782-1785.

상세보기
Lee, J. U., Gipp, P. P., Heller, C. M.. Carbon nanotube p-n junction diodes. Applied physics letters, vol.85, no.1, 145-147.

상세보기
Heo, J., Chung, H. J., Lee, Sung-Hoon, Yang, H., Seo, D. H., Shin, J. K., Chung, U-In, Seo, S., Hwang, E. H., Das Sarma, S.. Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition. Physical review. B, Condensed matter and materials physics, vol.84, no.3, 035421-.

상세보기
Yabuta, Hisato, Sano, Masafumi, Abe, Katsumi, Aiba, Toshiaki, Den, Tohru, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering. Applied physics letters, vol.89, no.11, 112123-.

상세보기
Himpsel, F. J., Hollinger, G., Pollak, R. A.. Determination of the Fermi-level pinning position at Si(111) surfaces. Physical review. B, Condensed matter, vol.28, no.12, 7014-7018.

상세보기
Lonergan, Mark C.. A Tunable Diode Based on an Inorganic Semiconductor|Conjugated Polymer Interface. Science, vol.278, no.5346, 2103-2106.

상세보기
Boettcher, Shannon W., Strandwitz, Nicholas C., Schierhorn, Martin, Lock, Nina, Lonergan, Mark C., Stucky, Galen D.. Tunable electronic interfaces between bulk semiconductors and ligand-stabilized nanoparticle assemblies. Nature materials, vol.6, no.8, 592-596.

상세보기
Liao, Lei, Lin, Yung-Chen, Bao, Mingqiang, Cheng, Rui, Bai, Jingwei, Liu, Yuan, Qu, Yongquan, Wang, Kang L., Huang, Yu, Duan, Xiangfeng. High-speed graphene transistors with a self-aligned nanowire gate. Nature, vol.467, no.7313, 305-308.

상세보기
Yu-Ming Lin, Farmer, D. B., Jenkins, K. A., Yanqing Wu, Tedesco, J. L., Myers-Ward, R. L., Eddy, C. R., Gaskill, D. K., Dimitrakopoulos, C., Avouris, P.. Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.32, no.10, 1343-1345.

상세보기

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 논문명, 저널/프로시딩명, 저자 , 발행년, 권, 호, 시작페이지, 끝페이지, 발행기관 관리번호, 논문명, 대등논문명, 저자 , 저널/프로시딩명, 발행기관, 발행년, 발행언어, 권, 호, 시작페이지, 끝페이지, ISBN, ISSN, 주제분야, 키워드, 초록(한글), 초록(영문), 저자(소속기관)
저장형식	Text(ASCII format) Excel format RefWorks Direct Export RIS format (for Reference Manager, ProCite, EndNote), Scholar's Aids, Mendeley
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier 원문보기

Abstract ▼ AI-Helper

참고문헌 (29)

이 논문을 인용한 문헌

관련 콘텐츠

원문 보기

원문 URL 링크

오픈액세스(OA) 유형

이 논문과 함께 이용한 콘텐츠

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트