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NTIS 바로가기IEEE transactions on semiconductor manufacturing : a publication of the IEEE Components, Hybrids, and Manufacturing Technology Society, the IEEE Electron Devices Society, the IEEE Reliability Society,, v.26 no.4, 2013년, pp.500 - 505
Nicoll, William L. (Coll. of Nanoscale Sci. & Eng., SUNY-Univ. at Albany, Albany, NY, USA) , Eisenbraun, Eric (Coll. of Nanoscale Sci. & Eng., SUNY-Univ. at Albany, Albany, NY, USA) , Gupta, Rahul (Air Liquide-Delaware Res. & Technol. Center, Newark, DE, USA)
This paper investigated a number of environmentally friendly fluorocarbon and hydrofluorocarbon (HFC) gas chemistries for sidewall passivation during time-multiplexed plasma etch processes of through-silicon vias (TSVs). The effect of plasma processing conditions on TSV etch rate, etch selectivity, ...
Fundamentals of deep silicon etch saraf 2011
fthenakis 0
Zhang, Da, Kushner, Mark J.. Surface kinetics and plasma equipment model for Si etching by fluorocarbon plasmas. Journal of applied physics, vol.87, no.3, 1060-1069.
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Blauw, M. A., Zijlstra, T., van der Drift, E.. Balancing the etching and passivation in time-multiplexed deep dry etching of silicon. Journal of vacuum science & technology. processing, measurement, and phenomena : an official journal of the American Vacuum Society. B, Microelectronics and nanometer structures, vol.19, no.6, 2930-.
Labelle, Catherine B., Donnelly, Vincent M., Bogart, Gregory R., Opila, Robert L., Kornblit, Avi. Investigation of fluorocarbon plasma deposition from c-C4F8 for use as passivation during deep silicon etching. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, vol.22, no.6, 2500-2507.
Evaluation of Unsaturated Fluorocarbons for Dielectric Etch Applications chatterjee 2002
Climate Change 2007 The Physical Science Basis Contribution of Working Group I to the Fourth Assessment Report of the Intergovernmental Panel on Climate Change forster 2007 213
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