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NTIS 바로가기Journal of physics. Conference series, v.505 no.1, 2014년, pp.012009 -
Uedono, A (Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan) , Sumiya, M (Wide Bandgap Material Group, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) , Ishibashi, S (Nanosystem Research Institute (NRI) "RICS", National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan) , Oshima, N (Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, Japan) , Suzuki, R (Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, Japan)
Point defects in InxGa1−xN grown by metal organic chemical vapor deposition were studied by a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for InxGa1−xN (x = 0.08 and 0.14) showed that ...
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