최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Current applied physics : the official journal of the Korean Physical Society, v.15 no.2, 2015년, pp.71 - 77
Nam, Hyohyun (School of Electrical Computer Engineering, University of Seoul, Seoul 130-743, Republic of Korea) , Cho, Min Hee (Memory TD, Semiconductor R&D Center, Samsung Electronics, Gyeonggi-do 445-330, Republic of Korea) , Shin, Changhwan (School of Electrical Computer Engineering, University of Seoul, Seoul 130-743, Republic of Korea)
Abstract A novel heterojunction symmetric tunnel field-effect transistor (S-TFET) has been proposed and investigated, for the first time, in order to address the inborn technical challenges of the conventional p-i-n TFET (i.e., asymmetric TFET). With a band-to-band tunneling process between the ger...
IEEE Electron Dev. Lett. Choi 28 743 2007 10.1109/LED.2007.901273 Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec
Nirsch 402 2004 IEEE Conference on Nanotech. Proc. The tunneling field effect transistor (TFET) used in a single-event-upset (SEU) insensitive 6 transistor SRAM cell in ultra-low voltage applications
IEEE Trans. Electron Dev. Matheu 59 1629 2012 10.1109/TED.2012.2191410 Planar GeOI TFET performance improvement with back biasing
Kim 178 2009 Symp. on VLSI Tech. Proc Germanium-source tunnel field effect transistors with record high ION/IOFF
IEEE Electron Dev. Lett. Kim 31 1107 2010 10.1109/LED.2010.2061214 Tunnel field effect transistor with raised germanium source
Appl. Phys. Lett. Toh 91 243505 2007 10.1063/1.2823606 Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
Dewey 33.6.1 2011 IEEE IEDM. Proc. Fabrication, Characterization, and physics of III-V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing
2010 Sentaurus Device 2010 User Guide
J. Appl. Phys. Kane 32 83 1961 10.1063/1.1735965 Theory of tunneling
Sov. Phys. JETP Keldysh 6 763 1958 Behavior of non-metallic crystals in strong electric fields
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.