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Microelectronics reliability, v.55 no.5, 2015년, pp.789 - 794
Dinara, S.M. , Ghosh, S. , Halder, N.N. , Bag, A. , Bhattacharya, S. , Biswas, D.
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Potential application of amorphous silicon nitride (a-Si3N4)/silicon oxy-nitride (SiON) film has been demonstrated as resistive non-volatile memory (NVM) device by studying the Al/Si3N4/SiON/p-Si metal-insulator-semiconductor (MIS) structure. The existence of several deep trap states was revealed by...
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