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NTIS 바로가기Organic electronics, v.32, 2016년, pp.115 - 119
Ooi, Poh Choon (Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea) , Lin, Jian (Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, PR China) , Kim, Tae Whan (Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea) , Li, Fushan (Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, PR China)
Indium-tin-oxide (ITO) free, nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between polymethylsilsesquioxane (PMSSQ) layers were fabricated directly on polyethylene terephthalate (PET) substrates by using a solution process technique. Current-voltage (I-V) curves f...
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