참고문헌 (31)

1. Ryu, Byungki, Noh, Hyeon-Kyun, Choi, Eun-Ae, Chang, K. J.. O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Applied physics letters, vol.97, no.2, 022108-.

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2. Bendickson, Jon M., Dowling, Jonathan P., Scalora, Michael. Analytic expressions for the electromagnetic mode density in finite, one-dimensional, photonic band-gap structures. Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, vol.53, no.4, 4107-4121.

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3. Nomura, Kenji, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors. Applied physics letters, vol.95, no.1, 013502-.

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4. Fung, Tze-Ching, Chuang, Chiao-Shun, Nomura, Kenji, Shieh, Han-Ping David, Hosono, Hideo, Kanicki, Jerzy. Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors. Journal of information display, vol.9, no.4, 21-29.

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5. Moon, Yeon-Keon, Lee, Sih, Kim, Woong-Sun, Kang, Byung-Woo, Jeong, Chang-Oh, Lee, Dong-Hoon, Park, Jong-Wan. Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator. Applied physics letters, vol.95, no.1, 013507-.

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6. Kwang Hwan Ji, Ji-In Kim, Yeon-Gon Mo, Jong Han Jeong, Shinhyuk Yang, Chi-Sun Hwang, Sang-Hee Ko Park, Myung-Kwan Ryu, Sang-Yoon Lee, Jae Kyeong Jeong. Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.12, 1404-1406.

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7. Ghaffarzadeh, Khashayar, Nathan, Arokia, Robertson, John, Kim, Sangwook, Jeon, Sanghun, Kim, Changjung, Chung, U-In, Lee, Je-Hun. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress. Applied physics letters, vol.97, no.11, 113504-.

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8. Ghaffarzadeh, Khashayar, Nathan, Arokia, Robertson, John, Kim, Sangwook, Jeon, Sanghun, Kim, Changjung, Chung, U-In, Lee, Je-Hun. Persistent photoconductivity in Hf-In-Zn-O thin film transistors. Applied physics letters, vol.97, no.14, 143510-.

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9. Oh, Himchan, Yoon, Sung-Min, Ryu, Min Ki, Hwang, Chi-Sun, Yang, Shinhyuk, Park, Sang-Hee Ko. Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor. Applied physics letters, vol.97, no.18, 183502-.

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10. Oh, Himchan, Yoon, Sung-Min, Ryu, Min Ki, Hwang, Chi-Sun, Yang, Shinhyuk, Park, Sang-Hee Ko. Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor. Applied physics letters, vol.98, no.3, 033504-.

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11. Liu, Po-Tsun, Chou, Yi-Teh, Teng, Li-Feng. Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress. Applied physics letters, vol.95, no.23, 233504-.

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12. Park, Sang‐Hee K., Hwang, Chi‐Sun, Ryu, Minki, Yang, Shinhyuk, Byun, Chunwon, Shin, Jaeheon, Lee, Jeong‐Ik, Lee, Kimoon, Oh, Min Suk, Im, Seongil. Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel. Advanced materials, vol.21, no.6, 678-682.

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13. Kim, E., Han, Y., Kim, W., Choi, K.C., Im, H.G., Bae, B.S.. Thin film encapsulation for organic light emitting diodes using a multi-barrier composed of MgO prepared by atomic layer deposition and hybrid materials. Organic electronics, vol.14, no.7, 1737-1743.

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14. Kim, Minkyu, Jeong, Jong Han, Lee, Hun Jung, Ahn, Tae Kyung, Shin, Hyun Soo, Park, Jin-Seong, Jeong, Jae Kyeong, Mo, Yeon-Gon, Kim, Hye Dong. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper. Applied physics letters, vol.90, no.21, 212114-.

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15. Han, Y.C., Kim, E., Kim, W., Im, H.G., Bae, B.S., Choi, K.C.. A flexible moisture barrier comprised of a SiO₂-embedded organic-inorganic hybrid nanocomposite and Al₂O₃ for thin-film encapsulation of OLEDs. Organic electronics, vol.14, no.6, 1435-1440.

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16. Olziersky, A., Barquinha, P., Vila, A., Magana, C., Fortunato, E., Morante, J.R., Martins, R.. Role of Ga₂O₃-In₂O₃-ZnO channel composition on the electrical performance of thin-film transistors. Materials chemistry and physics, vol.131, no.1, 512-518.

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17. Kim, Chang-Jung, Kim, Sangwook, Lee, Je-Hun, Park, Jin-Seong, Kim, Sunil, Park, Jaechul, Lee, Eunha, Lee, Jaechul, Park, Youngsoo, Kim, Joo Han, Shin, Sung Tae, Chung, U-In. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors. Applied physics letters, vol.95, no.25, 252103-.

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18. Lee, Keun-Woo, Shin, Hyun-Soo, Heo, Kon-Yi, Kim, Kyung-Min, Kim, Hyun-Jae. Light Effects of the Amorphous Indium Gallium Zinc Oxide Thin-Film Transistor. Journal of information display, vol.10, no.4, 171-174.

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19. Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., Keszler, D. A.. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Applied physics letters, vol.86, no.1, 013503-.

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20. Lee, Sangwon, Park, Jun-Hyun, Jeon, Kichan, Kim, Sungchul, Jeon, Yongwoo, Kim, Dae Hwan, Kim, Dong Myong, Park, Jae Chul, Kim, Chang Jung. Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors. Applied physics letters, vol.96, no.11, 113506-.

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21. Nomura, Kenji, Ohta, Hiromichi, Ueda, Kazushige, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor. Science, vol.300, no.5623, 1269-1272.

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22. Yabuta, Hisato, Sano, Masafumi, Abe, Katsumi, Aiba, Toshiaki, Den, Tohru, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering. Applied physics letters, vol.89, no.11, 112123-.

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23. Godo, Hiromichi, Kawae, Daisuke, Yoshitomi, Shuhei, Sasaki, Toshinari, Ito, Shunichi, Ohara, Hiroki, Miyanaga, Akiharu, Yamazaki, Shunpei. P‐9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In‐Ga‐Zn‐Oxide TFT. Society for Information Display International Symposium digest of technical papers, vol.40, no.1, 1110-1112.

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24. Nomura, Kenji, Ohta, Hiromichi, Takagi, Akihiro, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, vol.432, no.7016, 488-492.

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25. Cho, Sung Haeng, Ryu, Min Ki, Kim, Hee‐Ok, Kwon, Oh‐Sang, Park, Eun‐Sook, Roh, Yong‐Suk, Hwang, Chi‐Sun, Park, Sang‐Hee Ko. Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin‐film transistors. Physica status solidi. PSS. A, Applications and materials science, vol.211, no.9, 2126-2133.

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26. Ji, Kwang Hwan, Kim, Ji-In, Jung, Hong Yoon, Park, Se Yeob, Choi, Rino, Kim, Un Ki, Hwang, Cheol Seong, Lee, Daeseok, Hwang, Hyungsang, Jeong, Jae Kyeong. Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors. Applied physics letters, vol.98, no.10, 103509-.

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27. Yang, Shinhyuk, Hwan Ji, Kwang, Ki Kim, Un, Seong Hwang, Cheol, Ko Park, Sang-Hee, Hwang, Chi-Sun, Jang, Jin, Kyeong Jeong, Jae. Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment. Applied physics letters, vol.99, no.10, 102103-.

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28. Olziersky, Antonis, Barquinha, Pedro, Vilà, Anna, Pereira, Luís, Gonçalves, Gonçalo, Fortunato, Elvira, Martins, Rodrigo, Morante, Juan R.. Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors. Journal of applied physics, vol.108, no.6, 064505-.

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29. Jeong, Jae Kyeong, Won Yang, Hui, Jeong, Jong Han, Mo, Yeon-Gon, Kim, Hye Dong. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Applied physics letters, vol.93, no.12, 123508-.

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30. Handbook of Thin Film Materials ritala 2001 1 

31. Chang, Seongpil, Do, Yun Seon, Kim, Jong‐Woo, Hwang, Bo Yeon, Choi, Jinnil, Choi, Byung‐Hyun, Lee, Yun‐Hi, Choi, Kyung Cheol, Ju, Byeong‐Kwon. Photo‐Insensitive Amorphous Oxide Thin‐Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics. Advanced functional materials, vol.24, no.23, 3482-3487.

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