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Superlattices and microstructures, v.97, 2016년, pp.8 - 14
Wang, Y. , Tang, Y. , Sun, L.l. , Cao, F.
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In this work, we propose a junctionless MOSFET with asymmetric gates (AG-JL MOSFET). This device is a double gate structure with a lateral offset between the gate, and this leads to different characteristic than a conventional double gate structure. Specifically, the asymmetric gate modulates the ef...
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