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Journal of crystal growth, v.478, 2017년, pp.212 - 215
Li, Ding (Ferdinand-Braun-Institut, Leibniz-Institut fü) , Hoffmann, Veit (r Hö) , Richter, Eberhard (chstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany) , Tessaro, Thomas (Ferdinand-Braun-Institut, Leibniz-Institut fü) , Galazka, Zbigniew (r Hö) , Weyers, Markus (chstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany) , Tränkle, Günther (Ferdinand-Braun-Institut, Leibniz-Institut fü)
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Abstract We report that a H2-free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β-Ga2O3 to prevent the surface from damage. A simple growth method is proposed that can easily transfer established GaN growth recipes from sapphire to ...
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