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NTIS 바로가기Semiconductor science and technology, v.33 no.1, 2018년, pp.015009 -
Kim, Seung-Tae (Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-Gu, Seoul 01897, Republic of Korea) , Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-Gu, Seoul 01897, Republic of Korea)
We fabricated a resistive random access memory (ReRAM) device on a Ti/AlO x /Pt structure with solution-processed AlO x switching layer using microwave irradiation (MWI), and demonstrated multi-level cell (MLC) operation. To investigate the effect of MWI power on the MLC characteristics, post-depos...
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