[논문]Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs

Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Beom; Bang, Tewook; Son, Yoon-Ik; Ryu, Seong-Wan; Choi, Yang-Kyu

doi:10.1109/TED.2017.2783924

[해외논문] Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs

IEEE transactions on electron devices, v.65 no.2, 2018년, pp.419 - 423

Kim, Gun-Hee (School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea) , Bae, Hagyoul (School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea) , Hur, Jae (School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea) , Kim, Choong-Ki (School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea) , Lee, Geon-Beom (School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea) , Bang, Tewook (SK hynix Inc., Icheon, South Korea) , Son, Yoon-Ik (SK hynix Inc., Icheon, South Korea) , Ryu, Seong-Wan (SK hynix Inc., Icheon, South Korea) , Choi, Yang-Kyu (School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea)

Abstract ▼ AI-Helper

A highly biased linear current method (HBLCM) for separately extracting source and drain resistance ( ${R}_{S}$ and ${R}_{D}$) in MOSFETs is proposed. The technique can be applied to a single device by using simple modeling. Compared to other methods, it provides accurate values of ${R}_{S}$ and ${R}_{D}$ because it considers carrier mobility degradation. The method basically uses linear current versus gate voltage ( ${I}_{\text {DS}} - {V}_{\text {GS}}$ and ${I}_{\text {SD}} - {V}_{\text {GD}}$) characteristics before and after the source/drain interchange ( ${I}_{\text {DS}}$ and ${I}_{\text {SD}}$). Afterward, by using the traditional Y-function and subsequent resistance modeling in a highly biased linear condition, ${R}_{S}$ and ${R}_{D}$ can be separately extracted. In order to evaluate and verify the accuracy of HBLCM, an external resistor was intentionally connected to a source electrode of a device, and the resulting change in source resistance was detected using the proposed method. Moreover, to demonstrate an application of the proposed method, internal resistance deliberately created by hot-carrier injection (HCI) was linked to a drain electrode, thereby changing drain resistance. The changed drain resistance was also sensed by the HBLCM. Afterward, the HCI-stressed device was cured by electrothermal annealing driven by Joule heating, and the recovery was again clearly observed using the proposed method.

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[해외논문] Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs

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[해외논문] Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs

Abstract ▼ AI-Helper

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