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NTIS 바로가기Solid-state electronics, v.146, 2018년, pp.39 - 43
Liao, Jeng-Hwa (Corresponding author.) , Ko, Zong-Jie , Lin, Yu-Min , Lin, Hsing-Ju , Hsieh, Jung-Yu , Yang, Ling-Wu , Yang, Tahone , Chen, Kuang-Chao , Lu, Chih-Yuan
Abstract Continuous scaling down NAND flash memory toward below 1Xnm node generation will result in serious floating gate (FG) poly depletion and significantly impact the cell reliability performance. In this study, the FG implantation before inter-poly-dielectric deposition was proposed. We have s...
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Keun Woo Lee et al. A highly manufacturable integration technology of 20 nm generation 64 Gb multi-level NAND flash memory. In: Symp. VLSI Tech. Dig. Tech. Papers; 2011, p. 70-71.
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