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Journal of vacuum science and technology. materials, processing, measurement, & phenomena : JVST B. B, Nanotechnology & microelectronics, v.33 no.2, 2015년, pp.021203 -
Ding, Yi Ming (New Jersey Institute of Technology Electrical and Computer Engineering Department, , East Newark, New Jersey 07102) , Misra, Durgamadhab (New Jersey Institute of Technology Electrical and Computer Engineering Department, , East Newark, New Jersey 07102)
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This work investigates the interface properties in a metal oxide semiconductor capacitor device with a 3 nm HfAlO/0.5 nm SiO2/Si stacks prepared by various processing conditions. Different Al doping, different postannealing temperatures, and different deposition steps and stacks were considered. Equ...
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