참고문헌 (23)

1. 2000 622 T1 MRS Proc. T. P. Chow 

2. 2004 N. Ikeda 

3. Huang, W., Khan, T., Chow, T.P.. Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.27, no.10, 796-798.

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4. Niiyama, Yuki, Kambayashi, Hiroshi, Ootomo, Shinya, Nomura, Takehiko, Yoshida, Seikoh, Chow, Tat-sing Paul. Over 2 A Operation at 250 °C of GaN Metal-Oxide-Semiconductor Field Effect Transistors on Sapphire Substrates. Japanese journal of applied physics, vol.47, no.r9, 7128-.

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5. Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., Ueda, D.. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation. IEEE transactions on electron devices, vol.54, no.12, 3393-3399.

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6. Tsuyukuchi, Norio, Nagamatsu, Kentaro, Hirose, Yoshikazu, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu. Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact. Japanese journal of applied physics. Part 2, Letters, vol.45, no.3, L319-.

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7. Mizutani, T., Ito, M., Kishimoto, S., Nakamura, F.. AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.28, no.7, 549-551.

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8. Kuraguchi, Masahiko, Takada, Yoshiharu, Suzuki, Takashi, Hirose, Mayumi, Tsuda, Kunio, Saito, Wataru, Saito, Yasunobu, Omura, Ichiro. Normally-off GaN-MISFET with well-controlled threshold voltage. Physica status solidi. PSS. A, Applications and materials science, vol.204, no.6, 2010-2013.

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9. Oka, Tohru, Nozawa, Tomohiro. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.29, no.7, 668-670.

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10. Kanamura, M., Ohki, T., Kikkawa, T., Imanishi, K., Imada, T., Yamada, A., Hara, N.. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.3, 189-191.

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11. Ki-Sik Im, Jong-Bong Ha, Ki-Won Kim, Jong-Sub Lee, Dong-Seok Kim, Sung-Ho Hahm, Jung-Hee Lee. Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.3, 192-194.

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12. Hubbard, S.M., Zhao, G., Pavlidis, D., Sutton, W., Cho, E.. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs. Journal of crystal growth, vol.284, no.3, 297-305.

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13. Heikman, Sten, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition. Applied physics letters, vol.81, no.3, 439-441.

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14. Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Masayuki, Iwami, Yoshida, Seikoh. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE. Journal of crystal growth, vol.298, 831-834.

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15. Palacios, T., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S.P., Mishra, U.K.. AlGaN/GaN high electron mobility transistors with InGaN back-barriers. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.27, no.1, 13-15.

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16. Medjdoub, F., Derluyn, J., Cheng, K., Leys, M., Degroote, S., Marcon, D., Visalli, D., Van Hove, M., Germain, M., Borghs, G.. Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.2, 111-113.

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17. Lee, Hwa-Chul, Hyun, Sun-Young, Cho, Hyun-Ick, Ostermaier, Clemens, Kim, Ki-Won, Ahn, Sang-Il, Na, Kyoung-Il, Ha, Jong-Bong, Kwon, Dae-Hyuk, Hahn, Cheol-Koo, Hahm, Sung-Ho, Choi, Hyun-Chul, Lee, Jung-Hee. Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer. Japanese journal of applied physics, vol.47, no.4, 2824-.

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18. Kim, Dong-Seok, Kim, Sung-Nam, Kim, Ki-Won, Im, Ki-Sik, Kang, Hee-Sung, Kwak, Eun-Hwan, Lee, Jung-Hee, Lee, Seong-Gil, Ha, Jong-Bong. High Performance in a Normally-off Al2O3/GaN MOSFET Based on an AlGaN/GaN Heterostructure with a p-GaN Buffer Layer. Journal of the Korean Physical Society, vol.58, no.5, 1500-1504.

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19. Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I.. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications. IEEE transactions on electron devices, vol.53, no.2, 356-362.

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20. Kodama, Masahito, Sugimoto, Masahiro, Hayashi, Eiko, Soejima, Narumasa, Ishiguro, Osamu, Kanechika, Masakazu, Itoh, Kenji, Ueda, Hiroyuki, Uesugi, Tsutomu, Kachi, Tetsu. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching. Applied physics express, vol.1, no.2, 021104-.

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21. Ki-Won Kim, Sung-Dal Jung, Dong-Seok Kim, Hee-Sung Kang, Ki-Sik Im, Jae-Joon Oh, Jong-Bong Ha, Jai-Kwang Shin, Jung-Hee Lee. Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.32, no.10, 1376-1378.

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22. Kambayashi, H., Satoh, Y., Ootomo, S., Kokawa, T., Nomura, T., Kato, S., Chow, T.s.P.. Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage. Solid-state electronics, vol.54, no.6, 660-664.

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23. 2008 W. Huang