참고문헌 (52)

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14. Han, Yutong, Huang, Da, Ma, Yujie, He, Guili, Hu, Jun, Zhang, Jing, Hu, Nantao, Su, Yanjie, Zhou, Zhihua, Zhang, Yafei, Yang, Zhi. Design of Hetero-Nanostructures on MoS₂ Nanosheets To Boost NO₂ Room-Temperature Sensing. ACS applied materials & interfaces, vol.10, no.26, 22640-22649.

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15. Han, Yutong, Ma, Yujie, Liu, Yang, Xu, Shusheng, Chen, Xinwei, Zeng, Min, Hu, Nantao, Su, Yanjie, Zhou, Zhihua, Yang, Zhi. Construction of MoS₂/SnO₂ heterostructures for sensitive NO₂ detection at room temperature. Applied surface science, vol.493, 613-619.

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16. Lim, June Yeong, Kim, Minju, Jeong, Yeonsu, Ko, Kyeong Rok, Yu, Sanghyuck, Shin, Hyung Gon, Moon, Jae Young, Choi, Young Jai, Yi, Yeonjin, Kim, Taekyeong, Im, Seongil. Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides. npj 2D materials and applications, vol.2, no.1, 37-.

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18. Yang, Heejun, Heo, Jinseong, Park, Seongjun, Song, Hyun Jae, Seo, David H., Byun, Kyung-Eun, Kim, Philip, Yoo, InKyeong, Chung, Hyun-Jong, Kim, Kinam. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier. Science, vol.336, no.6085, 1140-1143.

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20. Nourbakhsh, Amirhasan, Zubair, Ahmad, Dresselhaus, Mildred S., Palacios, Tomás. Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.16, no.2, 1359-1366.

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25. Koo, Bondae, Shin, Gwang Hyuk, Park, Hamin, Kim, Hojn, Choi, Sung-Yool. Vertical-tunneling field-effect transistor based on MoTe₂/MoS₂ 2D–2D heterojunction. Journal of physics. D, applied physics, vol.51, no.47, 475101-.

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26. Shin, Gwang Hyuk, Koo, Bondae, Park, Hamin, Woo, Youngjun, Lee, Jae Eun, Choi, Sung-Yool. Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS₂ Three-Dimensional-Two-Dimensional Heterostructure. ACS applied materials & interfaces, vol.10, no.46, 40212-40218.

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27. Bertolazzi, Simone, Krasnozhon, Daria, Kis, Andras. Nonvolatile Memory Cells Based on MoS₂/Graphene Heterostructures. ACS nano, vol.7, no.4, 3246-3252.

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28. Sup Choi, Min, Lee, Gwan-Hyoung, Yu, Young-Jun, Lee, Dae-Yeong, Hwan Lee, Seung, Kim, Philip, Hone, James, Jong Yoo, Won. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nature communications, vol.4, 1624-.

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29. Wang, Han, Yu, Lili, Lee, Yi-Hsien, Shi, Yumeng, Hsu, Allen, Chin, Matthew L., Li, Lain-Jong, Dubey, Madan, Kong, Jing, Palacios, Tomas. Integrated Circuits Based on Bilayer MoS₂ Transistors. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.12, no.9, 4674-4680.

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30. Radisavljevic, Branimir, Whitwick, Michael Brian, Kis, Andras. Integrated Circuits and Logic Operations Based on Single-Layer MoS₂. ACS nano, vol.5, no.12, 9934-9938.

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31. Cheng, Rui, Jiang, Shan, Chen, Yu, Liu, Yuan, Weiss, Nathan, Cheng, Hung-Chieh, Wu, Hao, Huang, Yu, Duan, Xiangfeng. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nature communications, vol.5, 5143-.

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32. Kim, Young Duck, Hone, James. Materials science: Screen printing of 2D semiconductors. Nature, vol.544, no.7649, 167-168.

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33. Carey, Benjamin J., Ou, Jian Zhen, Clark, Rhiannon M., Berean, Kyle J., Zavabeti, Ali, Chesman, Anthony S. R., Russo, Salvy P., Lau, Desmond W. M., Xu, Zai-Quan, Bao, Qiaoliang, Kavehei, Omid, Gibson, Brant C., Dickey, Michael D., Kaner, Richard B., Daeneke, Torben, Kalantar-Zadeh, Kourosh. Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals. Nature communications, vol.8, 14482-.

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34. Late, Dattatray J., Liu, Bin, Luo, Jiajun, Yan, Aiming, Matte, H. S. S. Ramakrishna, Grayson, Matthew, Rao, C. N. R., Dravid, Vinayak P.. GaS and GaSe Ultrathin Layer Transistors. Advanced materials, vol.24, no.26, 3549-3554.

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35. Shur, M.S.. Low ballistic mobility in submicron HEMTs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.23, no.9, 511-513.

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36. Na, Junhong, Joo, Min-Kyu, Shin, Minju, Huh, Junghwan, Kim, Jae-Sung, Piao, Mingxing, Jin, Jun-Eon, Jang, Ho-Kyun, Choi, Hyung Jong, Shim, Joon Hyung, Kim, Gyu-Tae. Low-frequency noise in multilayer MoS₂field-effect transistors: the effect of high-k passivation. Nanoscale, vol.6, no.1, 433-441.

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37. Sangwan, Vinod K., Arnold, Heather N., Jariwala, Deep, Marks, Tobin J., Lauhon, Lincoln J., Hersam, Mark C.. Low-Frequency Electronic Noise in Single-Layer MoS₂ Transistors. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.13, no.9, 4351-4355.

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38. Xie, Xuejun, Sarkar, Deblina, Liu, Wei, Kang, Jiahao, Marinov, Ognian, Deen, M. Jamal, Banerjee, Kaustav. Low-Frequency Noise in Bilayer MoS₂ Transistor. ACS nano, vol.8, no.6, 5633-5640.

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39. Li, Hong, Zhang, Qing, Yap, Chin Chong Ray, Tay, Beng Kang, Edwin, Teo Hang Tong, Olivier, Aurelien, Baillargeat, Dominique. From Bulk to Monolayer MoS₂: Evolution of Raman Scattering. Advanced functional materials, vol.22, no.7, 1385-1390.

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42. Lee, Hee Sung, Baik, Seung Su, Lee, Kimoon, Min, Sung-Wook, Jeon, Pyo Jin, Kim, Jin Sung, Choi, Kyujin, Choi, Hyoung Joon, Kim, Jae Hoon, Im, Seongil. Metal Semiconductor Field-Effect Transistor with MoS₂/Conducting NiO_x van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed. ACS nano, vol.9, no.8, 8312-8320.

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43. Rizzo, A.. Electrical properties of n-type GaS single crystals. Solid state communications, vol.40, no.5, 641-644.

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50. Zou, Xuming, Wang, Jingli, Chiu, Chung‐Hua, Wu, Yun, Xiao, Xiangheng, Jiang, Changzhong, Wu, Wen‐Wei, Mai, Liqiang, Chen, Tangsheng, Li, Jinchai, Ho, Johnny C., Liao, Lei. Interface Engineering for High‐Performance Top‐Gated MoS₂ Field‐Effect Transistors. Advanced materials, vol.26, no.36, 6255-6261.

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51. Kim, Sunkook, Konar, Aniruddha, Hwang, Wan-Sik, Lee, Jong Hak, Lee, Jiyoul, Yang, Jaehyun, Jung, Changhoon, Kim, Hyoungsub, Yoo, Ji-Beom, Choi, Jae-Young, Jin, Yong Wan, Lee, Sang Yoon, Jena, Debdeep, Choi, Woong, Kim, Kinam. High-mobility and low-power thin-film transistors based on multilayer MoS₂ crystals. Nature communications, vol.3, 1011-.

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