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NTIS 바로가기Physics Symposium, 2007. Proceedings. 45th Annual. IEEE International, 2007 Apr., 2007년, pp.167 - 170
Changseok Kang (Semicond. R&) , Jungdal Choi (D Center, Samsung Electron. Co., Ltd., Kyungki-Do) , Jaesung Sim (Semicond. R&) , Changhyun Lee (D Center, Samsung Electron. Co., Ltd., Kyungki-Do) , Yoocheol Shin (Semicond. R&) , Jintaek Park (D Center, Samsung Electron. Co., Ltd., Kyungki-Do) , Jongsun Sel (Semicond. R&) , Sanghun Jeon (D Center, Samsung Electron. Co., Ltd., Kyungki-Do) , Youngwoo Park (Semicond. R&) , Kinam Kim (D Center, Samsung Electron. Co., Ltd., Kyungki-Do)
It was found that the charge loss behavior of TANOS (TaN-Al2O3-nitride-oxide-silicon) cells for NAND flash memory application is highly dependent on the gate structures for the first time. The gate structures with trap layers remained on source and drain regions showed increased charge loss compared...
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