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NTIS 바로가기Integrated Circuits (ISIC), 2014 14th International Symposium on, 2014 Dec, 2014년, pp.412 - 415
Lung, D. H. (Dept. of Elec. Eng., National Taiwan University, Taipei) , Hu, S. K. (Dept. of Elec. Eng., National Taiwan University, Taipei) , Kuo, J. B. (Dept. of Elec. Eng., National Taiwan University, Taipei) , Chen, D. (UMC, Hsinchu) , Chen, Y. J. (School of Information Eng., Shenzhen Graduate School, Peking University)
This paper reports the subthreshold characteristics of the SOI NMOS device considering the floating body effects. As verified by the experimentally measured data, as the channel length is scaled down from 1μm to 120nm, the subthreshold slope is steeper as a result of the dominance of the para...
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